GG03 Search Results

Contextual Info: MICRON TECHNOLOGY INC S5E D • blllSHT GG0334G 7bl ■ MRN piCZRON 64K MT5C6401 X 1 SRAM - 'T 4 C 7 - 2 .V O S T SRAM 64K X 1 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

anzac frequency

Abstract: anzac AT-200
Contextual Info: M / A - C Ô M INC/ AN ZA C DIV 14E D MMICABSORPTIVEVVA' MODEEAT-20Qg « i f f i B S L 4 2 1 7 7 GG032Et> fl î f '7 * - '7y ~/3 Low Insertion Loss, 1.2 dB Typical -o Fast Switching Speed, 4 ns Typical Ultra Low DC Power Consumption Outstanding Flatness Guaranteed Specifications*

KA2210 AMPLIFIER

Abstract: Protector IC For Stereo Power Amplifier KA2210
Contextual Info: SAMSUNG SEM ICOND UC TO R INC Tfl GG03Ö7S 1 | TO H*O S O l ’ KA2210 DEI 7 ^ 4 1 4 5 LINEAR INTEGRATED CIRCUIT 5.5W DUAL POWER AMPLIFIER The KA2210 is a monolithic integrated circuit consisting of 2 channel power amplifier. It is suitable for stereo and bridge amplifier application

f48c

Contextual Info: 17E |]| • PHILIPS E C G INC bbS3*iSÛ GG03714 7 ■ T -74 -0 5-01 E C G 1031 0.5W OTL AUDIO POWER AMPLIFIER sem iconductors ABSOLUTE M AXIMUM RATINGS PACKAGE V „ . 9 V lQ peak . 0.6 A Pt . 0.8 W

CS100

Contextual Info: SHARP ELEK/ MELEC DIV Photointerrupter 1SE D I fllflGT'ìa GG03177 G I - ' GP1S07 T-41-73 GP1S07 - Subminiature Photointerrupter • ■ Features 1. 2. 3. Ultra-colmpact Capacity: 0.06cc and light PW B mounting type package High sensing accuracy (Slit width: 0.8mm)

KA2210 AMPLIFIER

Abstract: KA2210
Contextual Info: SAMSUNG SEMICONDUCTOR INC Tfl DE| 7^4145 GG03Ö7 5 1 | T 0 4 - Ö S O l KA2210 LINEAR INTEGRATED CIRCUIT 5.5W DUAL POWER AMPLIFIER The KA2210 is a monolithic integrated circuit consisting of 2 channel power amplifier. It is suitable for stereo and bridge amplifier application

Contextual Info: @SPT SPT77Ó O 8-BIT, 1 GSPS FLASH A/D CONVERTER S/G/VAL PROCESS/NG TECHNOLOGIES FEATURES APPLICATIONS Digital Oscilloscopes Transient Capture Radar, EW, ECM Direct RF Down-Conversion 1:2 Demuxed ECL Compatible Outputs Wide Input Bandwidth - 900 MHz Low Input Capacitance -1 5 pF MQUAD

OS222

Abstract: DS2223 DS2224 te333
Contextual Info: »ALLAS SEMICONDUCTOR CORP 3TE D 5 b lM 1 3 0 00034EL S H i DAL PRELIM INARY DS222X DALLAS SEMICONDUCTOR FEATURES EconoRAM PACKAGE OUTLINE • Low-cost general-purpose 256-bit memory • DS2223 has 256-bit SRAM - D S2224 has 32-bit ROM, 224-bit SRAM • Reduces control, address and data Interface to

IC 2864 eeprom

Abstract: 2764 EEPROM DS1225-200 EEPROM 2864 2764 eprom PINOUT ram DS1225 ds1225 DS1225-100 2864 eeprom EEPROM 2864 CMOS
Contextual Info: DALLAS SEMICONDUCTOR CORP 3=iE D at.14130 0003364 4 Hi DAL DS1225AB/AD ' 'C ^ i b 3 7 DS1225AB/AD D A LLA S 64K Nonvolatile SRAM SEM ICONDUCTOR FEATURES A PIN DESCRIPTION • Data retention in the absence of Vco • Data Is automatically protected during power

gm71c4400b

Contextual Info: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­

931 diode smd

Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient

H.294

Abstract: aa2c
Contextual Info: INTEGRATED DEVICE 14E D • 4055771 G0Q3472 7 HIGH-SPEED STATIC RAM ORGANIZED AS 32Kx9 ADVANCE INFORMATION IDT 71509 -rwé -73- IH FEATURES: DESCRIPTIO N: • 32K x 9 Parity checking Static RAM The IDT71509 is a 294,912-bit high-speed static RAM organized

tsm 1250

Abstract: CD4A1490 pow-r-blok thyristor bridge ed 4 CD4A1290 1S697 BP107 CD4A1690 CR02AM CR03AM CR04AM
Contextual Info: P OWE RE X INC 1SE mMBŒX D • 7£T4b21 DDG3b07 ñ ■ C D 4 A Powerex, Ino., Híllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 »90 D U 3l S C R P O W -R -B L O K

Contextual Info: POWEREX I NC 1SE D • 7BTMLB1 0 D G 3S 5 3 2 ■ T - 2 .5 ' ^ 2 3 r<M/EREX C C 42 C N 47 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode Center Tap

Contextual Info: T R I Q U I N T S E M I C N D U C T 0 R , I N C r e s t W I R E L E S S C O M M U N I C A T I O N S TQ9205 2 . 4 - 2 . 5 GHz Am plifier/Switch CO Features T h e T Q 9 2 0 5 is a m onolithic transmit/receive amplifier function designed specifically for spread-spectrum applications in the 2 .4 - 2 .5 G H z IS M band. The receive path

4000SC

Contextual Info: UPD30401 V R 4000SC 64-Bit Microprocessor Preliminary Hardware User's Manual Publication ID: IEU-1331 Publication Date: December 1, 1992 Company: N E C ELECTRONICS INC Th is title page is provided as a service by Inform ation Handling S ervices and displays

80c51/31 MHS

Contextual Info: October 1992 IlM l 80C31/80C51 DATASHEET CMOS SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31/80C51-L : 0 TO 6 MHz WITH 2.7 V < Vcc < 6 V 80C51F : 80C51 WITH PROTECTED ROM 80C31/80C51:0 TO 12 MHz 80C31/80C51-1: 0 T 0 16 MHz 80C31-S/80C51-S : 0 TO 20 MHz FEATURES •

Contextual Info: .100" 2.54 mm Header (U. S. Standard Product) { f f mm 1100-29 Right Angle Locking (High Backwall) Right angle locking polarizing headers with preinserted .025” square pins. Allows many design options, when low profile or locked interconnects are required. Mates with

Contextual Info: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current

i8237A

Abstract: i8237 i8259a 68C45 Z80 CRT controller micron cmos 1988 interface 8254 with 8086 8086 structure block diagram of 8086 and 8088 M85C30
Contextual Info: V L S I TECHNOLOGY INC IflE D H P V L S I T ech n o lo gy, inc. • T3flfl347 0D0324L. S ■ t- ^ VMC10 AND VMC100 SERIES 2-MICRON AND 1.5 MICRON ADVANCED CMOS MEGACELL FAMILY FEATURES FAMILY DESCRIPTION ASIC COMPATIBLE • Library of m icroprocessor peripheral functions

Contextual Info: Programmable Peripheral PSD311L 3-Volt Single-Chip Microcontroller Peripheral Preliminary Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications □ 256 Kbits of UV EPROM — Organized as 32K x 8 □ 3.0 to 5.5 Volt Operation

Contextual Info: 1SE D P O W E R E X INC • 72T4b21 QG035G7 4 ■ fOMERSr C D 72 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Current Source Inverter POW-R-BLOK Modules

Contextual Info: pMC-Sierra, Inc. PM7323 RCMP-200 P r e l im in a r y I n f o r m a t io n is su e 1 ROUTING CONTROL, MONITORING AND POUCING 200 Mbps FEA TU R ES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements