BTI53 Search Results

Contextual Info: bti53T31 00 32 3 3 1 Philips Semiconductors T10 APX ^^^Preliminai^specificatlon Hybrid CATV amplifier module BGD885 — N A1ER PHILIPS/DISCRETE PINNING -SOT11SD FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input

CQ 419

Abstract: IEC134
Contextual Info: OSB 9215 SERIES OSM9215 SERIES OSS 9215 SERIES N AMER P H I L I P S / D I S C R E T E SSE D I bti53‘i3 1 00250=17 7 • 7 ^ 2 2 - 0 7 HIGH-VOLTAGE RECTIFIER STACKS T h e O S B 9 2 1 5 , O S M 9 2 1 5 and O S S 9 2 1 5 series are ranges o f high-voltage re c tifie r assemblies,

Thyristor TAG 87

Abstract: thyristor TAG 13
Contextual Info: ObE D N AMER PHILIPS/DISCRETE bti53,i31 0011643 b BT153 *s -i3 JK 1 FAST TURN-OFF THYRISTOR Glass-passivated fast-turn-off thyristor in a TO-220AB envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable fo r use in regulator,

1115a

Abstract: ecg circuit schematic 12 lead ecg circuit diagram philips 1115 ECG circuit diagram ECG11ISA ECG1115A circuit diagram of ECG
Contextual Info: 17E PHILIPS E C G INC bti53‘i2A 0004502 û ECG1115, ECG1115A ECG Semiconductors AUDIO POWER AMPLIFIER Featurei: • • • • • ECG 1115 THERMAL SHUTDOWN OVERVOLTAGE PROTECTION LOW HARMONIC AND CROSSOVER DISTORTION HIGH CURRENT CAPABILITY 2 .5A SUPPLY VOLTAGE RANGE (4V-20V)

BYV60

Contextual Info: N AMER PHI LI PS/ DI SC RE TE 11 TDD bti53li31 Dm, 03=14 1 D BYV60 SERIES V ô3 - i 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times w ith soft recovery characteristics.

byx30

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D B ^53=131 0 0 2 2 7 ^ 7 B A _ BYX30 SERIES 7^0 3 - 1 7 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 Diffused silicon diodes in DO-4 m etal envelopes, capable of absorbing tran sien ts.

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121

7Z66

Abstract: BYX39-1400 BYX39-600 016T oowe BYX39 BYX39-1400R BYX39-600R IEC134 BYX39 400
Contextual Info: AMER PH ILIPS/DISCRETE 25E ^53^31 D 0022Û1S 1 Hi BYX39 SERIES 7 = 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333— F005 Silicon diodes in a DO— 4 metal envelope, capable o f absorbing transients and Intended for use in power rectifier application.

universal laptop schematic power supply circuit diagram

Abstract: P3C18V8Z35A P3C18V8Z35FA P3C18V8Z35N
Contextual Info: P3C18V8Z35/P3C18V8ZI 42T 3 VOlt Ze S .'? "db! 'pOWer universal PAL devices SIC3 Product specification • Philips Semiconductors Programmable Logie Devices All the P3C18V8Z devices are available in plastic DIP, PLCC and Plastic Small Outline SOL packages. A ceramic DIP with a

BGY67

Abstract: DIN45004B
Contextual Info: bbSSTBl Philips Sem iconductors 0032353 bfll M A P X Product specification BGY67 CATV amplifier module N APER PHILIPS/DISCRETE P IN N IN G -S O T 1 1 5 C FEATURES PIN • Excellent linearity 1 input • Silicon nitride passivation 2 comm on • Rugged construction

transistor d 1933

Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
Contextual Info: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial

transistor IC BT 134

Abstract: sot23 a60 PMBT5551
Contextual Info: • bbSBTBl 0D25flô2 atD ■ APX N ANER PHILIPS/DISCRETE PMBT5551 t.7E D _ _ _ _ A_ SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal tran sisto r fo r general purposes and especially te le ph o n y applications and encapsulated in a SO T23 envelope.

BUK657-500A

Abstract: BUK657-500B BUK657 BUK657-500C T0220AB buk657-500 r gb 489
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • 0D2071D T ■ PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: bb53R31 0D2707D b7b * A P X bRE D N AUER PH ILI PS/ DIS CRET E Philips Semiconductors Product specification Voltage regulator diodes DESCRIPTION BZG03 series QUICK REFERENCE DATA High reliability glass-passivated diodes in a small rectangular SMD SOD106A envelope. The envelope

Contextual Info: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

Contextual Info: CNX35U CNX36U CNX39U OPTOCOUPLERS O p tically coupled isolators consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable f o r T T L integrated circuits. Features • • • • High ou tpu t/inpu t D C current transfer ratio

Contextual Info: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency

SCN68000C8N64

Abstract: CZ 5.0VDC SCN68000C6A68 DAN-101 SCN68000 S68000 ls- 11m scn680 scn68020 SCN68000C8I64
Contextual Info: 2TE D NAPC/ SIGNETICS • b b S 3 T 24 005405=1 T ■ T-V9-V7-/V SCN68000 Signetics 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION PIN CONFIGURATION The SCN68000 is the first implementa­ tion of the S68000 1 6 /3 2 bit micropro­

TB531

Abstract: m1573 BYW92 BYW92-50
Contextual Info: N AMER P H IL IP S /D IS C R E T E 5SE D • ^53= 131 0U 2577S II MAINTENANCE TYPE y 4 ■ BYW92 SERIES y r - o s - i^ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low

ECG1287

Contextual Info: _ J_ ’ PHILIPS E C G INC 17E D • bbS3=]£fl □ O O t4flôO S S' EGG ECG1287 Audio Power Amplifier Se m ico n d u cto rs Features • Short circuit protection • Thermal shutdown 14 13 12 II 10 9 8 n n n i-ii-in .280" 7.ll MAX.

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

s3331

Contextual Info: P h ilip s S em icond uctors Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm minimum • High current transfer ratio and

transistor BD 339

Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Contextual Info: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.