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    2SK1922 Search Results

    2SK1922 Datasheets (3)

    Sanyo Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK1922
    Sanyo Semiconductor N-Channel Silicon MOSFET Ultrahigh-Speed Switching Original PDF 112.98KB 4
    2SK1922
    Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF 112.51KB 4
    2SK1922
    Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF 487.49KB 3

    2SK1922 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    431i

    Contextual Info: 2SK1922 A P A dvanced Perform ance Series 2052B V dss = 600V N Channel Power M O S F E T E 431I F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode (trr= 100ns). A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage


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    2sk19222052b100ns431i PDF

    2SK1922

    Contextual Info: Ordering number:EN4311 N-Channel Silicon MOSFET 2SK1922 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode trr=100ns . unit:mm 2052C [2SK1922] 10.2 3.6 4.5 5.1 18.0 15.1


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    en43112sk1922100ns2052c+1o-220ab PDF

    2SK1922

    Abstract: diode gg 2a
    Contextual Info: Ordering num ber:EN 4311 _ 2SK1922 No.4311 N -Channel MÖS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. • High-speed diode trr = 100ns . A b s o lu te M ax im u m R a tin g s a tT a = 25°C


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    en43112sk1922100nsdiode gg 2a PDF

    Contextual Info: 2SK1922 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.75 Minimum Operating Temp (øC)-55


    Original
    2sk1922 PDF

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


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    2sj2722sj273t0-220ml2sj274+132sk19042sk190560m/80m2sk19062sj2752sj2762sk18852sj2702sk18712sk18832sk21642sk22272sj26 PDF

    2SK1925

    Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5


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    2sk17372sk1738t02202sk1921+42sk21422sj2540220m2sk1925 PDF

    2SK2227

    Contextual Info: Voss = 450V, N-channel m TP SM P « b 2SK2403 2SK2404 Electrical characteristics at Ta = 25°C f*OS en Package m 2SK2406 & I 1 i Typ« No. -2 T C 450 130 VGS{0ffj typ/max at min to max Vqs = 10V (Q) P# m m m m Ciss m typ (ns) 1.0 30 3.5/4.5 0.8 300 80 3.0


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    2sk24062sk24032sk24042sk2405+52sk2407o-2202sk19222sk19232sk2227 PDF

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    t0220mlto-32-0702sa1678fc102+72sc44492sa14162sj1932sk2832sc4106 application notes2sc3383fc124 PDF

    2SJ32C

    Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
    Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


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    2sk192sk1923t0-2202sk1924+132sk2043ls2sk2044lso-220fi2sk2045ls2sk19222sj32c2sk142sk21422sj3202sj3062sk1422sk1952sk2161 PDF

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


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    tnd023ffx504cph5504mch5805+16fx505hpa72rtnd024ffx506mch3301tnd024mp2sk34362sa18722sc60932sc49432sa19702sk38502sk1597tt20842sc52672sk3744 PDF

    700 v power transistor

    Abstract: SB07
    Contextual Info: p Discrete Devices for Video Cameras Complex Type Transistor + Schottky Barrier Diode Transistor Type Package No. FP101 Pc m PCP4 V C iO lc (V) (A) 25 2.0 v CE(sat) FP301 PCP4 2/100 1.1* 1.5/75 0.6 50 (V) 0.5 500 3.0 25 2.0 2/500 1.5/30 140 to 2/100 560


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    fp1012sb1121sb05-05cp2sb1396+7sb07-03c2sd1621fp102fp301250mm2700 v power transistorsb07 PDF

    NPN Transistor 600V SC-62

    Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
    Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and


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    form-126t0-126lpt0-220cit0-220ml+16sc-67ot-186o-220fisc-67ks0t-189t0-220mflsdwatt220npn transistor 600v sc-622sk26322sk1413sanyo bipolar transistor pcpsanyo sc-622sk19242sk26232sk1412ls2sk14612sk1923 PDF

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


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    40610hkpctc-00002289cph5815mch5815+16mch6629mch6649cph6610cph6614sch1411sch14362sk34362sc60932sa18722sk15972sk38502sc5269tt20842sc49432sc57932sa1970 PDF