2SB1396 Search Results

Contextual Info: I Ordering number : EN 2911 2SB1396 P N P Epitaxial P lana r Silicon T ransistor DC-DC Converter, Motor Driver Applications F eatures . Adoption of FBET, MBIT processes - Large c u rre n t capacity •Low collector to em itter saturation voltage • Small size making it easy to provide high-density, small-sized hybrid ICs

2SB1396

Abstract: ITR09637 ITR09638
Contextual Info: 2SB1396 Ordering number : EN2911A SANYO Semiconductors DATA SHEET 2SB1396 PNP Epitaxial Planar Silicon Transistor DC-DC Converter, Motor Driver Applications Features • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

Contextual Info: Product specification 2SB1396 Features Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -15 V Collector-emitter voltage

2SB1396

Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SB1396 Features Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter

2SB1396

Contextual Info: Ordering number:EN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density,

no291

Abstract: 2SB1396 ITR09637 ITR09638 ITR09639 ITR09640 ITR09641 ITR09642
Contextual Info: Ordering number:ENN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features Package Dimensions unit:mm 2038A [2SB1396] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes. · Large current capacity.

dc-dc stepdown converter 12 to 5v 3a

Abstract: IC 555 details dc-dc converter 12v to 5v 3a
Contextual Info: Improvement by MBIT-II Conventional MBIT 65k cell / inch2 MBIT-II 114k cell / inch2 PCP SC-62 CPH 2SB1396 (10V, 3A) CPH3106 (12V, 3A) 2.9 (C) 4.5 1.5 (C) CPH PCP 2.8 0.9 4.25 (B) (E) Mount Area : 8.1mm2 (B) (C) (E) MCPH Mount Area : 19.1mm2 f s me Pro i

2088a

Contextual Info: Ordering number : EN 3 9 6 1 A N 0 .3 9 6 1 A II_ FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky B arrier Diode SAiYO DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB1205

Abstract: 2SD1801
Contextual Info: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.

2sc4983

Contextual Info: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.

transistor b985

Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Contextual Info: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.

TA-0718

Abstract: 2088a FP107 2SB1396
Contextual Info: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1396

Abstract: FP102 SB07-03C
Contextual Info: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

700 v power transistor

Abstract: SB07
Contextual Info: p Discrete Devices for Video Cameras Complex Type Transistor + Schottky Barrier Diode Transistor Type Package No. FP101 Pc m PCP4 V C iO lc (V) (A) 25 2.0 v CE(sat) FP301 PCP4 2/100 1.1* 1.5/75 0.6 50 (V) 0.5 500 3.0 25 2.0 2/500 1.5/30 140 to 2/100 560

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

2SB1370

Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Contextual Info: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40

2SB1396

Abstract: CPH6704 1.5A COMMON CATHODE
Contextual Info: 注文コード No.N 6 9 9 9 CPH6704 No. N 6 9 9 9 62501 新 CPH6704 特長 TR : PNP エピタキシァルプレーナ形シリコントランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・PNP トランジスタとショットキバリアダイオードを 1 パッケージに 2 素子内蔵した複合タイプであり

Contextual Info: Ordering number: E N 3 9 6 1 A _ FP102 No. 3961A PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,

FP102 equivalent

Abstract: 2SB1396 FP102 SB07-03C No39
Contextual Info: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

2SB1396

Abstract: no291
Contextual Info: Ordering number : EN 2911 2SB 1396 N o.2911 i P N P Epitaxial P la n a r Silicon T ran sisto r SA\YO i DC-DC Converter, Motor Driver Applications F eatu re s . Adoption of FBET, MBIT processes •L arg e c u r r e n t capacity • Low collector to em itte r sa tu ra tio n voltage