EN5401
Abstract: SBS001C
Contextual Info: Ordering number:EN5401 SBS001C Schottky Barrier Diode 15V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SBS001C] Features · Low forward voltage (VF max=0.45V).
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SBS001C
Contextual Info: 注文コード No. N 5 4 0 1 SBS001C No. N 5 4 0 1 20100 SBS001C ショットキバリアダイオード 15V500mA 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。 特長 ・順電圧が低い（VF max=0.45V）
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ENN8206
Abstract: CPH5810 MCH3312
Contextual Info: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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ep51ecph6605mch6613ech8609+16cph3424cph3427k3614fw343fw356fw360on line ups circuit diagrams2sk3850242mssfp packagek34923ln03mch3435cph5612three phase on line ups circuit diagramstn6r04
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CPH5810
Abstract: MCH3312
Contextual Info: CPH5810 注文コード No. N 8 2 0 6 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード CPH5810 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ（MCH3312）
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marking PA
Abstract: CPH3106 CPH6701 "marking PA"
Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.
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TA-0718
Abstract: 2088a FP107 2SB1396
Contextual Info: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
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SBE001
Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
Contextual Info: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP
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ecsp1006-2ecsp1008-2ecsp1608-4sb30w03t+13sb40w03tsb10w05tsb25w05tsbe001sb20015mss2003mss3003chec2d02bsb007-w03csb10015msbs004mss200ss10015m
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2sc6096
Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
Contextual Info: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages
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TA-1524
Abstract: A11502 CPH3106 CPH6701 TA72
Contextual Info: 注文コードNo.N 6 0 0 7 A No. N 6 0 0 7 A 40300 半導体ニューズ No.6007 とさしかえてください。 CPH6701 特長 PNPシリコンエピタキシャルプレーナ形トランジスタ ショットキバリアダイオード DC/DCコンバータ用
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CPH3109
Abstract: MCPH6
Contextual Info: Trs. for DC-DC Converter No.1 Step-Down DC-DC Converter & Polarity Inverting DC-DC Converter Series MBIT-II Series : VIN VOUT PNP-Tr&Complex (Tr+SBD) *VIN>VOUT Control IC Low VF SBD PNP-Tr Series Device No. VCBO (V) MCH3106 MCH3109 MCH3105 MCH6101 MCH6102
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sb30
Abstract: si120
Contextual Info: Smal ¡“Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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V23101-D0003-A201
Abstract: V23102-C0003-A211 V23102 V23102 A0006 A111 V23101-D0104-B201 a211 ECR30 c0006a A201 miniature relay
Contextual Info: Miniature Relay W11 V23102-C0* 2 changeover contacts, bifurcated Immersion cleanable Standard or sensitive For printed circuit mounting, pin arrangement suits 2.54 mm grid in acc. with DIN 40801 and DIN 40803, average Illustration approx. original size Approx. weight 5 g
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CPH3106
Abstract: CPH6701 EN6007
Contextual Info: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky
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SBI60
Abstract: SBS002C SB600 SB50-09 SB05-05P SBI60-05R to220mf SB50-09J SB50-18 SB60-05H
Contextual Info: Continued from previous page VRRM V Package type 10(A) 5 40 - TO-220ML SBA50-04J - - - SBA50-04Y TO-220 j - - - - SB60-05J - SB60-05K - - T0-220 - SB80-05H SB80-09 - TO-220ML - SB80-05J SB80-09J - T0-3PB - - - SB80-18 TO-220 - SB100-05H S B 100-09 - SBA100-04J
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B1396
Abstract: transistor s72
Contextual Info: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )
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CPH3106
Abstract: CPH6701 TA-1524 marking PA
Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky
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2SB1396
Abstract: FP107 ITR10832 ITR10833 ITR10834 ITR10835
Contextual Info: 注文コード No. N 5 4 1 3 A FP107 No. N5413A 81000 開発速報 No. ※ 5413 とさしかえてください。 FP107 特長 PNP エピタキシァルプレーナ形シリコントランジスタ ショットキバリアダイオード複合 DC / DC コンバータ用
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transistor s72
Abstract: B1123 B1396 di621 sanyo CG B1121 FP101 FP102 FP103 FP104
Contextual Info: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )
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SB01-05QCA
Contextual Info: SA0O S m a l l - S i g n a l H i g h - V o l t a g e S c h o t t k y Barr ier Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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