2SK155 Search Results

A2232

Abstract: A-2232
Contextual Info: 2SK1552-01L,S F U JI P O W E R M O S-FET - F-II SERIES _ _ _ _ N-CHAN NEL SILICON POWER MOS-FET • Features ■ Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power

2SK1553-01

Abstract: 2sk1553
Contextual Info: 2SK1553-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -F - I S E R I E S • Features Outline Drawings • Hicjh speed switching • Low on-resistance • No secondary breakdown • Low driving power

P012

Abstract: 2SK1552-01L
Contextual Info: 2SK1552-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High current Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee 0.9 ±0.3 Outline Drawings

2SK1553-01MR

Contextual Info: 2SK1553-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage TO-220F15 Applications Switching regulators UPS DC-DC converters

2SK1553-01M

Abstract: schematic symbols UPS
Contextual Info: 2SK1553-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features ^ g £ p | £ g Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage

Contextual Info: 2SK1553-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■ Applications

Contextual Info: 2SK1552-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High current Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee 0.9 ±0.3 Outline Drawings

2sk1553

Contextual Info: 2SK1553-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage TO-220F15 Applications Switching regulators UPS DC-DC converters

1848T

Contextual Info: 2SK1553-01 MR FUJI POWER M OS-FET N- CHANNE L SI LI CON P O W E R MOS - F E T _ T Ä — k - F - I S E R I E S • Features Outline Drawings • Hit|h speed sw itching • L o w on-resistance • No second ary breakdow n

2SK1553-01

Abstract: T151 MOSFET 20 NE 50 Z 2SK1553
Contextual Info: 2SK1553-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features Outline Drawings • Hitjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi |h voltage • Avialanche-proof ■ Applications

a2232

Abstract: A-2232 TI AIH 2SK1552-01 155201
Contextual Info: 2SK1552-01 L,S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II S E R IE S • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • \'r<ss= ±30V Guarantee • Avalanche-proof

a2232

Abstract: A-2232 2SK1552-01 2SK1552-01L
Contextual Info: 2SK1552-01 L,S FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET SERIES ^ • Features ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GSS= ± 3 0 V Guarantee

2SK1011

Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK955

Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01

2SK1171

Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn

2sk1507

Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

2SK2696

Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
Contextual Info: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

2SK056

Contextual Info: MOSFETs F-l Series - Low Rds ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947M R 2SK901 i;-: tJdiruAin RSBr V dss (V ) MA) P d (W ) Qss(pt) Coss(pf) ton (ns) toff (ns) 50 100 250 250 250 45 32 12 12 20 125 125 80 40 125 0.03 0.06 0.30 0.30 0.15 3000

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01

2sk1005

Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn