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    2SJ668 Search Results

    2SJ668 Datasheets (5)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SJ668
    Toshiba TRANS MOSFET P-CH 60V 5A 3SC-64 Original PDF 219.37KB 6
    2SJ668
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SJ668(2-7B1B)
    Toshiba 2SJ668 - TRANSISTOR 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original PDF 208.21KB 6
    2SJ668(2-7J1B)
    Toshiba 2SJ668 - TRANSISTOR 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original PDF 208.21KB 6
    2SJ668(TE16L1,NQ)
    Toshiba 2SJ668 - Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) PW-Mold T/R Original PDF 208.21KB 6
    SF Impression Pixel

    2SJ668 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SJ668(TE16L1,NQ)

    Trans MOSFET P-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SJ668(TE16L1,NQ) 88 1
    • 1 $2.25
    • 10 $1.69
    • 100 $1.40
    • 1000 $1.40
    • 10000 $1.40
    Buy Now
    Quest Components () 2SJ668(TE16L1,NQ) 70
    • 1 $3.00
    • 10 $3.00
    • 100 $1.13
    • 1000 $1.13
    • 10000 $1.13
    Buy Now
    2SJ668(TE16L1,NQ) 70
    • 1 $3.00
    • 10 $3.00
    • 100 $1.13
    • 1000 $1.13
    • 10000 $1.13
    Buy Now
    TME 2SJ668(TE16L1,NQ) 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.38
    Get Quote

    Toshiba America Electronic Components 2SJ668

    5 A, 60 V, 0.25 OHM, P-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ668 1,491
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.31
    • 10000 $0.31
    Buy Now

    2SJ668 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J668

    Abstract: 2sj668 SC-64
    Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


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    2sj668j668sc-64 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 z 4 V gate drive 0.6 MAX. 5.5 ± 0.2 1.2 MAX. z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


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    2sj668j668 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original
    2sj668j668 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4 V gate drive 5.5 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    2sj668j668 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: 2SJ668 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII 2SJ668 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 z 4V 駆動です。 1 記号 定格 単位


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    2sj668j668 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: 2SJ668 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII 2SJ668 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4V 駆動です。 5.5 ± 0.2 : RDS (ON) = 0.12 Ω (標準)


    Original
    2sj668sc-64j668 PDF

    J668

    Abstract: 2SJ668
    Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original
    2sj668j668 PDF

    j668

    Contextual Info: 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


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    2sj668j668 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    5252 f 1009 4-pintpc 8028marking s3h sot363tk8a50d equivalent+6tk6a65d equivalent2sk4112tpca8030-htoshiba laptop charging circuit diagramtk80a08k3tpca*8025 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078 PDF

    Contextual Info: XC9252 シリーズ JTR05038-004 低消費電流 30V 動作降圧 DC/DC コントローラ •概要 XC9252 シリーズは30V 動作降圧 DC/DC コントローラ IC です。外付けのドライバ Tr として Pch MOSFET を使用するため、低入力電


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    xc9252jtr05038-004280khz550khz PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603 PDF

    Contextual Info: IXD3252 30V 30V Input Voltage StepStep-Down DC/DC Con Controller ontroller P-channel transistor and low ESR ceramic capacitors. An internal 0.8 V reference voltage allows set output voltage using external resistive divider RFB1, RFB2 starting from 1.5 V.


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    ixd3252ixd352 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


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    2sk29632sk29622sj5082sj509+152sk36702sj3132sj3382sk20132sk21622sj3602sk3878 equivalent2sk26112sk37592sk38782sk3869toshiba power mos fet 2sj 2sk2sk38682sk3567 equivalent2sk2718 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    sony psp CIRCUIT diagram

    Abstract: CXA3785R 2SJ668 equivalent AMP4 2SJ668 cxa378 sony psp diagram sony psp
    Contextual Info: Audio Driver for TV CXA3785R Description The CXA3785R is an integrated audio sub-system designed for TV audio application. It has a stereo headphone amplifier, and 4 stereo amplifiers. It also integrated gain control, mute control, input selector, and voltage detectors. Each settable value is controlled through I2C compatible interface.


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    cxa3785r16db/1dbsony psp circuit diagram2sj668 equivalent+5amp42sj668cxa378sony psp diagramsony psp PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    bcj0082bbcj0082a2sk4207to220sis+8tpca*8023tk80a08k3tpc8119tk40a08k32sk4112ssm3j16fs2sk3568tpc8a03 PDF

    Contextual Info: IXD3252 30V 30V Input Voltage StepStep-Down DC/DC Con Controller ontroller P-channel transistor and low ESR ceramic capacitors. An internal 0.8 V reference voltage allows set output voltage using external resistive divider RFB1, RFB2 starting from 1.5 V.


    Original
    ixd3252ixd352 PDF

    GRM32ER71H106KA12L

    Contextual Info: XC9252 シリーズ JTR05038-003a 低消費電流 30V 動作降圧 DC/DC コントローラ •概要 XC9252 シリーズは30V 動作降圧 DC/DC コントローラ IC です。外付けのドライバ Tr として Pch MOSFET を使用するため、低入力電


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    xc9252jtr05038-003a280khz550khz+1grm32er71h106ka12l PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    bce0082btpca*8064tk12a10k3tpca8077+72sk3567 equivalentssm3j328tpca8077-htj11a10m3tk50e06k3atpca*8077tpca8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123 PDF

    Contextual Info: XC9252 Series ETR05038-003a Low Power Consumption Step-down DC/DC Controller IC •GENERAL DESCRIPTION The XC9252 series is a 30V operation step-down DC/DC controller IC. under low input voltage. The external P-ch driver transistor is used to achieve a stable operation


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    xc9252etr05038-003a280khz550khz PDF