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    TDK Corporation B32560J6682K289

    Capacitor: polyester; 6.8nF; 200VAC; 400VDC; 7.5mm; ±10%; MKT; THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME B32560J6682K289 3,410 10
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    • 10 $0.13
    • 100 $0.09
    • 1000 $0.07
    • 10000 $0.07
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    Avnet Americas B32560J6682K289 Ammo Pack 19 Weeks 28,000
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    Mouser Electronics B32560J6682K289
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    TDK Corporation B32562J6684K

    Capacitor: polyester; 680nF; 400VDC; 15mm; ±10%; MKT; THT; -55÷125°C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME B32562J6684K 1,200
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    Avnet Americas B32562J6684K Bulk 20 Weeks 2,400
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    • 10000 $0.38
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    Avnet Abacus B32562J6684K 21 Weeks 2,400
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    Toshiba America Electronic Components 2SJ668(TE16L1,NQ)

    Transistor: P-MOSFET; unipolar; -60V; -5A; 20W; DPAK; ESD
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    TME 2SJ668(TE16L1,NQ) 2,000
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    Bristol Electronics 2SJ668(TE16L1,NQ) 88 1
    • 1 $2.25
    • 10 $1.69
    • 100 $1.40
    • 1000 $1.40
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    TDK Corporation B32560J6682J

    - Bulk (Alt: B32560J6682J000)
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    Avnet Americas B32560J6682J Bulk 23 Weeks 15,200
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    TDK Corporation B32560J6683K

    - Bulk (Alt: B32560J6683K000)
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    Avnet Americas B32560J6683K Bulk 23 Weeks 7,200
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    Find more J668 price and stock on Findchips.com

    J668 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Y splitter rj45

    Abstract: CANopen RJ45 usb to rj45 extenders rj45 10pin molex 50394-8100 crimping RJ45 AMP stegmann MC58120 MC58220 Cable-RJ45-02-R
    Contextual Info: Prodigy /CME PCI User’s Guide Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.2, December 2009 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,


    Original     		y splitter rj45canopen rj45usb to rj45 extendersrj45 10pin molex+650394-8100crimping rj45 ampstegmannmc58120mc58220cable-rj45-02-r PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    J668

    Abstract: 2sj668 SC-64
    Contextual Info: J668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII J668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2sj668j668sc-64 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: J668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII J668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 z 4 V gate drive 0.6 MAX. 5.5 ± 0.2 1.2 MAX. z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2sj668j668 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: J668 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII J668 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2sj668j668 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: J668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII J668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4 V gate drive 5.5 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2sj668j668 PDF

    j668

    Abstract: 2SJ668
    Contextual Info: J668 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII J668 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 z 4V 駆動です。 1 記号 定格 単位


    Original     		2sj668j668 PDF

    Cable-5003-01

    Abstract: 51110-1051 ED3000 FRJAE PR-002A TRM-RJ45-02-R Cable-RJ45-02-R hall sensor 4-pin floppy Kycon KLDX-0202-A CANopen RJ45 resistor
    Contextual Info: Prodigy /CME Stand-Alone Card User’s Guide Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.2, December 2009 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,


    Original     		dc-1000cable-5003-0151110-1051ed3000+7frjaepr-002atrm-rj45-02-rcable-rj45-02-rhall sensor 4-pin floppykycon kldx-0202-acanopen rj45 resistor PDF

    j668

    Abstract: 2SJ668
    Contextual Info: J668 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII J668 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 z 4V 駆動です。 5.5 ± 0.2 : RDS (ON) = 0.12 Ω (標準)


    Original     		2sj668sc-64j668 PDF

    sim 300 v 703

    Abstract: j646 J645 j668 J733 J7-42 j649 j748 j657 J735
    Contextual Info: Make sure the next Card you purchase has. SB-36XXXTX Series COMBINATION S/R-D AND D-S/R CONVERTER cPCI CARD FEATURES • Angle Position Indicator API - Three Independent Channels - Synchro & Resolver Format, 2, 11.8 & 90 Vrms (L-L) - Programmable Bandwidth 15/80Hz


    Original     		sb-36xxxtx15/80hz16-bitcha11716-2482+131-800-ddc-5757a5976e-6/06-0sim 300 v 703j646j645j668j733j7-42j649j748j657j735 PDF

    J668

    Abstract: 2SJ668
    Contextual Info: J668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII J668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2sj668j668 PDF

    j668

    Contextual Info: J668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII J668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2sj668j668 PDF