2SJ537 Search Results

2SJ537

Abstract: Toshiba 2SJ
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)

j537

Abstract: J5-37 2SJ537
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)

J537

Abstract: 2SJ537
Contextual Info: 2SJ537 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅥ 2SJ537 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.16Ω (標準) z 順方向伝達アドミタンスが高い。

2SJ537

Abstract: J537
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance

2SJ537

Contextual Info: TO SH IBA 2SJ537 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI 2SJ537 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Souree On Resistance

2SJ537

Abstract: Toshiba 2SJ
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) l High forward transfer admittance

J537

Abstract: 2SJ537
Contextual Info: 2SJ537 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅥ 2SJ537 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.16Ω (標準) z 順方向伝達アドミタンスが高い。

Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance

J537

Abstract: 2SJ537
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance

Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)

Contextual Info: TOSHIBA 2SJ537 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 7T-MOSVI 2SJ537 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source On Resistance

Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)

2SJ537

Contextual Info: TOSHIBA 2SJ537 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI 2SJ537 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Souree On Resistance

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

j537

Contextual Info: 3.50 PHONE JACK V~T S c h e m a tic AC -O 1 -o * -o 1 V A_ -O 3 -O 5 -O 2 -O 4 V AC -O 2 -O 1 -o ♦ -O 5 -O 2 -o 1 AC -O 5 -O 2 NEW 2 S J -4 3 7 2 3 N 1 3 2 S J -4 3 7 3 3 N 1 3 2 S J -4 3 7 4 3 N 1 3 2 S J -4 3 7 4 3 N 13 OLD S J -4 3 7 2 -N -M Model No.