2SD471 L Search Results

2SD471

Abstract: 2SB564 BO9477
Contextual Info: 2SD471 SILICON TRANSISTORS TO-92 The 2SB564 PNP and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. ABSOLUTE MAXIMUM RATINGS ECB 30V Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 25V Emitter-Base Voltage

2sb564

Abstract: 2SD471
Contextual Info: W& 2SB564 2SD471 • t t v SILICON TRANSISTORS TO-92 The 2SB564 PNP and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage ECB VCBO VCEO VEBO

2SD471

Abstract: transistor 2Sd471 2SD471 L 2SB564
Contextual Info: NEC D E S C R IP TIO N NPN SILICON TRANSISTOR 2SD471 The 2SD471 is designed for use in driver and output stages of PACKAG E D IM E N S IO N S audio frequency amplifiers. in millimeters inches FEATURES • High Total Power Dissipation: 1.0 W at 2 5 ° C Am bient Temperature.

2SD471

Contextual Info: ST 2SD471 NPN Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD471

Contextual Info: ST 2SD471 NPN Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD471

Contextual Info: ST 2SD471 NPN Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SD471

Contextual Info: ST 2SD471 NPN Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SD471 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD454

Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
Contextual Info: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *

transistor 551 x17

Abstract: transistor tt 2078 Transistor iaw 91 2SD471 K SCI 0542 2SD471 lm 348 audio X514 T108 X108
Contextual Info: SEC j > \ =1 > h S ilic o n 7 > V 7 ^ T r a n s is t o r 2SD471 N P N X f á > + '> T J H B ÿ U 3 > l ' 7 > ÿ X 5 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o í& M 7 ÿt, A - t y > 7 ° 'J j > ? >J 'M m .E í t í l í 'f 0 2 SB 5 6 4 1 n

2SD471

Abstract: BO9477 2SB564 2SD471 TO-92
Contextual Info: The 2SB564 P N P and 2SD471 TO-92 (NPN) a re de sig n e d f o r use in d r i v e r and o u tp u t s ta g e s o f au d io fre q u e n c y a m p lifie r s . ABSOLUTE MAXIMUM RATINGS ECB 30V C o lle c t o r - B a s e V o lta g e VCBO C o lle c t o r - E m i t t e r V o lta g e

to3a

Abstract: 2SB536 T03B 2SB511 2SD331 2SD325 2SD3258 2SD314 2SB546A 2SD341
Contextual Info: - 218 - Ta=25T;, *EP(äTc=25*C M £ J± & m & (V) . Vc e o lc(DC) Pc (V) (A) (W) 1 Pc* icBO (W) imax) < jb A> V'CB (V) ft > (min) E fö 4# (max; 14 V’ cE (V) (Ta=25*C) [*EP(ätypfla VcE(sat vmaxj (V) Ic /I e (A) (V) Ic (A) 1b (A) 2SD124AH B \L PSW 75 50

2SC875 D

Abstract: 2N5816 2SC875 2SA532 2SA503 2SA504 2N5822 2SC87 2sc1175 2N5819
Contextual Info: TYPE NO. P O L A R IT Y Medium Power Amplifiers and Switches CASE 'c A V CEO (V) min max 625 625 625 625 625 0.75 0.75 0.75 0.75 1 40 40 40 40 60 100 100 150 150 60 200 200 300 300 120 1 1 1 0.2 2 60 60 60 50 30 60 100 100 200 50 2 2 2 2 2 1 40 60 30 40

2sc1175

Abstract: 2sc100b 2SC959N 2SC1346 2SC938 2SC959 2SD471 92PU01A 92PU02 92PU45
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M RATING S H P O L A R IT Y TYPE CASE 2SC934 2SC938 2SC959 2SC1008 N N N N TO-92B TO-92B TO-39 TO-39 300 250 700 800 0.3 0.2 0.7 0.7 15 60 80 60 40 50 40 80 560# 232# 200# 240# 20 50 200 50 5 1 5 2 0.5 2 0.7

92PU07

Abstract: TO-237 MICRO ELF-002
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. P O L A R IT Y T-27-01 CASE M A X IM U M R ATIN G S Pd ImW 'c A) H V CEO (V) V CE(SAT) FE min max 'c Im A ) V CE (V) max IV ) 'c (A) f T m in

2sc3667

Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A
Contextual Info: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00

TL 2262

Abstract: 2SC2279 te 2304 2257A 2SC2050 2SC2371 2SC2611 2SD467 2sc710 2SC1815
Contextual Info: - J tt tö T fö T M anuf. € = W SANYO 2SC3416 • y'V irV y-yj-y ■y-ytry te T jä T 0 tL 0 tL S 2: 2SC1570 2SD400 2SD826 = # 0 V h a n s B m B ^ 0 tL K $ 2SC2274 2SC1755 2SC1755 CII m s s T ype No. 2SC 2257A 2SC 2258 2SC 2260 J 2SC 2261 ✓ 2SC 226 2 —2SC 2263

92PU

Abstract: 92PU05 TQ-237 92PU06 2SA598
Contextual Info: MICRO ELE CTRONICS LTD 3I E I> B b O ^ lT ä S 0000=121 2 D M E H K Medium Power Amplifiers and Switches ~T-2Sl-ot TYPE NO. P O L A R IT Y T -3 3 -D / CASE M A X IM U M R A T IN G S Pd mW 'c (A) H V CEO (V) min V C E (SA T ) FE max 'c Im A) VCE (V) max

2SB564

Abstract: 2SD471
Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SB564 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB564 is designed fo r use in driver and o u tp u t stages o f audio frequency am plifiers. FEATURES PACKAGE DIMENSIONS • High to ta l power dissipation:

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

2SB504

Abstract: 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331
Contextual Info: - 54 - Ta=25cC, *EP(äTc=25‘ C m % f fl £ & m VcBO VcEO lc ( D O Pc Pc* (V) (V) (A) (W) (W) ICBO (max) ( j ü A) % tä 4# te 0 ^ 2 5 *0 ) [*E P (ä typ 3 hF E VcB (V) (min) (max) Vc e (V) ¡ c/ I e (A) (max) (V) (V) Ic (A) Ib (A) 2SB434G LF PA/SW -60

2SB564

Abstract: m0471 2SD471 2SB564, transistor Scans-005445
Contextual Info: NEC DESCRIPTION PNP SILICON TRANSISTOR 2SB564 The 2SB564 is designed fo r use in driver and o u tp u t stages of audio frequency amplifiers. PACKAGE DIMENSIONS in m illim ete rs inches FEATURES • High Total Power Dissipation: 1.0 W at 25 °C A m bient Temperature.

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。