LN2302 Search Results
LN2302 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LN2302LT1G | Leshan Radio Company | 20V N-Channel Enhancement-Mode MOSFET | Original | 506.44KB | 5 |
LN2302 Price and Stock
Mersen Electrical Power A70QS100-4IL (N230288)FUSE, HIGH SPEED, FORM 101, BOLT-IN, A70QS, IL INDICATOR, 700VAC/DC, 100A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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A70QS100-4IL (N230288) | Bulk | 5 | 7 Weeks | 1 |
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Buy Now | ||||
LRC Leshan Radio Co Ltd LN2302BLT1G(Alt: LN2302BLT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LN2302BLT1G | 15,000 | 20 Weeks | 3,000 |
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Buy Now | |||||
LRC Leshan Radio Co Ltd LN2302LT1G20V N-Channel Enhancement-Mode MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LN2302LT1G | 39,231 |
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Buy Now | |||||||
LN2302 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM |
Original |
ln2302lt1g236ab195mm150mm+5 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. LN2302LT1G ▼ Capable of 2.5V gate drive ▼ Small package outline 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage |
Original |
ln2302lt1g236ab | |
LN2302Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G S-LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 Features 2 High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM |
Original |
ln2302lt1gs-ln2302lt1g236abaec-q101+2 | |
LN2302ALT1GContextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS ON ≦85mΩ@VGS=4.5V LN2302ALT1G S-LN2302ALT1G ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) 3 ● Exceptional on-resistance and maximum DC current |
Original |
ln2302alt1gs-ln2302alt1gaec-q101ln2302alt3g+2 | |
LN2302LT1GContextual Info: LESHAN RADIO COMPANY, LTD. LN2302LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ Features 3 1 2 High Density Cell Design For Ultra Low On-Resistance SOT– 23 (TO–236AB) Improved Shoot-Through FOM |
Original |
ln2302lt1g236ab195mm150mm+5 | |
sot-23 single diode mark PD
Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
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ln2302lt1g236ab3000/tapeln2302lt3g+11 | |
2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
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Original |
zmm22zmm24zmm27zmm43+11 | |
KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
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Original |
usfb053usfb13usfb13ausfb13l+16 |