2SD1899 Search Results

Contextual Info: 2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2 3 D-PAK(TO-252) Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR NPN TO – 252 FEATURES z Low VCE(sat) z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

HFE100

Contextual Info: 2SD1899-Z NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SD1899 -Z TRANSISTOR NPN TO-251 FEATURES z High hFE z Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter 2.COLLECTOR Value Unit

2SD1899-Z

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR NPN TO-252 FEATURES Power dissipation PCM: 1. BASE 2 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO:

TC-1818A

Contextual Info: SILICON TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD 18 99-Z is d e sig n ed for A u dio F re q u e n c y A m p lifier and PACKAGE DIM ENSIONS in millimeters S w itc h in g , e sp e cia lly in H ybrid Integrated C ircu its.

2SD1899-Z

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V

2SD1899-Z

Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1899-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SD1899-Z

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR NPN TO-251 FEATURES z High hFE hFE=100 to 400 z Low VCE(sat) VCE(sat)=0.25V 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.COLLECTOR

Contextual Info: IC SMD Type Product specification 2SD1899-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR NPN TO-251 TO-252-2L FEATURES z High hFE hFE=100 to 400 z Low VCE(sat) VCE(sat)=0.25V 123 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

TC-1818A

Abstract: TC181 2SD1899-Z
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION <R> PACKAGE DRAWING Unit: mm The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V

2sd1899

Contextual Info: 2SD1899 Transistor NPN 1.BASE TO-252-2L 2.COLLECTOR 3.EMITTER Features — — High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

2SD1899

Abstract: 1899-Z 1899
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SD1899,1899-Z NPN エピタキシアル形シリコン・トランジスタ 低周波電力増幅，中速度スイッチング 外形図（単位：mm） 小形外形でありながら大電流特性を有しておりスイッチング速度も

2SD1899

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR NPN TO-252-2L FEATURES z High hFE hFE=100 to 400 z Low VCE(sat) VCE(sat)=0.25V 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.COLLECTOR

2SD1899-Z

Contextual Info: Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR NPN TO-252 FEATURES Power dissipation PCM: 1. BASE 2 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR NPN TO – 252 FEATURES z Low VCE(sat) z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1899

Abstract: 1899-Z
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SD1899-Z

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for