2SD1834 Search Results

transistor bf 194

Abstract: BF 235 BF 194 transistor BF 194 TRANSISTORS bf 194 BF 811 2SD1834 TR1935 2987 433E
Contextual Info: SPICE PARAMETER 2SD1834 * 2SD1834 DARLINGTON NPN BJT model * Date: 2006/12/05 *C B E .SUBCKT 2SD1834 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .MODEL Q1model NPN + IS=95.000E-15 + BF=194.11 + VAF=15 + IKF=1.0843 + ISE=95.000E-15 + NE=1.5307 + BR=44.010

2SD1834

Contextual Info: Medium Power Transistor 60V, 1A 2SD1834 Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. Dimensions (Unit : mm) MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit

Contextual Info: 2SD1834 h ~7 > v 7. $ /T ra n sisto rs 2SD1834 4 ,117jiii,llIffl/M eciium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor v^ANi taWw VcVvJiT- • ^ J ^ T b ilU /D im e n s io n s U n it: mm P a ra m e te r Sym bol 3 U ? ? • = IU 7 ^ • X S ^ f lt M

2SD1865

Abstract: 2SD1834 2SD1468S
Contextual Info: Transistors 2SD1834 2SD1468S / 2SD1865 94S-340-D64 (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SD1468S

Abstract: 2SD1834 2SD1865
Contextual Info: Transistors 2SD1834 2SD1468S / 2SD1865 94S-340-D64 (94L-767-D65) 311

D1647

Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
Contextual Info: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368

2SD1834

Contextual Info: h ~7 > V $ /'Tran sistors 2SD1834 2SD1834 7 -J B N P N # - u > h > m m Epitaxial Planar NPN Silicon Transistor (Darlington) tfS^JiSfiffl/M edium Power Amp. • fl-ff^ fiill/D im e n s io n s (U n it: mm) 1) # - ' J > h > i g ^ ? a h FETi.-5o hFE = 15000 (Typ.)

2SD1834

Abstract: T100
Contextual Info: 2SD1834 Transistors Medium Power Transistor 60V, 1A 2SD1834 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0

2SD1834

Contextual Info: Medium Power Transistor 60V, 1A 2SD1834 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit

2SD1834

Abstract: T100 05 marking code transistor ROHM
Contextual Info: Medium Power Transistor 60V, 1A 2SD1834 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 Inner circuit

23d14

Contextual Info: 2SD1834 2SD1468S/2SD1865 Transistors M edium Pow er T ran sistor 60V, 1A I 2SD1834 •Features • A b so lu te maximum rating« ( T a = 2 5 t } 1 ) Darlington connection for high D C current gain. (Typ. 15000 at Vce/lc~3V/0.5A) 2 ) High input impedance.

2SD1834

Contextual Info: 2SD1834 Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1834; D E*, where ★ is hFE code • Darlington connection provides high DC current gain (hFE), typically hFE = 15,000 at VCE = 3 V, lc = 500 mA

2SD1466

Abstract: 2SD1834 OOLB AQ marking rohm
Contextual Info: 2SD1834 2SD1468S/2SD1865 Transistors Medium Power Transistor 60V, 1A I 2SD1834 •A b s o lu te maximum ratings ( T a = 2 5 t ) •F e a tu re s 1 ) Darlington connection for high DC current gain. (Typ. 15000 at V ce/I c = 3 V /0 .5 A ) 2 ) High input im pedance.

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SiS 661FX

Abstract: jbt1 D400F sis661fx Notebook lcd inverter schematic 71-D40U0-D04 lcd lg power board schematic LG crt monitor PCB schematic Preface Notebook Computer SiS 661 clock
Contextual Info: Preface Notebook Computer D400F/D410F Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

ATI MOBILITY RADEON 9000

Abstract: 3564M RADEON 9000 bluetooth schematic d47 Preface Notebook Computer airborn connector d400e SML-010
Contextual Info: Preface Notebook Computer D400E/D410E Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

B1182

Abstract: B 1182 b1184 D1664
Contextual Info: T r T r a n s sto rs ★ Package m ounted on ceram ic 14 x 18 x 0.7m m • MPT SOT-89 , CPT (DPAK) Types Ty pe . (A) 32 -1 2* MPT (A) CPT 2 S B 1132 — — 2 S B 1184 -5 0 3 — 15 2 S B 1188 2 S B 1182 -32 2 2* 10 2 S B 1189 — 80 2 S B 1260 2SB1181

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

ci 8602 gn

Abstract: ci 8602 gn block diagram 12v dc cdi schematic diagram L146 IC 8602 gn Alc201A 12v dc cdi schematic diagram for cdi tk 1838 ir m6502 IR TK 1838
Contextual Info: Schematic Diagrams System Block Diagram M400 System Block Diagram Sheet 1 of 41 System Block Diagram Schematic Diagrams Socket 478 1 of 2 <O>HD#[0 *3] VCC CORK COin r- cr> ;-v^ s> ^ ^ :>;> r - ^ > > s> ^ s> ^ S ’- ^ ^ !•> ^ ^ N ^ ^ ^ ^ ^ ^ ^ ^ ^ r » : >

2SD1812

Abstract: 2SD1818 2SD1832 GV 269 2SD1816 2SD1817 2SD1819A 2SD1820 2SD1820A 2SD1821
Contextual Info: - 268 - mXËfè a g m îa=25°C, *EPfàTc=25'C • v-Bu Vc e o (V) (V) . m Ivvi/w Pc Pc* ICBO (A) (W) (W) (UA) O —A PA 160 160 1.5 0.9 2SD1S15 = m pstr 120 100 3 1 20 PSW 120 100 4 1 H # PD 80 60 3 1 10 2SD1817 W 1!È (V) (Ta=25cC) (V) [*EP(átyp{¡f]