2SD1821A Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Features  Package  High collector-emitter voltage (Base open) VCEO

2SD1821A

Abstract: S-Mini3-G1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV

2SD1821

Abstract: 2SD1821A
Contextual Info: Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planar type 0.425 Unit: mm For high breakdown voltage low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • High collector to emitter voltage VCEO • Low noise voltage NV

Contextual Info: Transistors IC SMD Type Product specification 2SD1821A Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 185 V Collector-emitter voltage

2SD1821A

Abstract: 100Ku smd marking gv
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1821A Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 185 V Collector-emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821, 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5°

2SD1821

Abstract: 2SD1821A
Contextual Info: Transistors 2SD1821, 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • High collector-emitter voltage (Base open) VCEO

2SD1821

Abstract: 2SD1821A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821, 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10

2SD1821

Abstract: 2SD1821A panasonic transistor marking pr
Contextual Info: Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.425 +0.1 1.25±0.1 0.3–0 0.65 1.3±0.1 ● 0.425 1 0.65 ● 2.1±0.1 High collector to emitter voltage VCEO.

2SD1821

Abstract: 2SD1821A
Contextual Info: Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.425 +0.1 1.25±0.1 0.3–0 0.65 1.3±0.1 ● 0.425 1 0.65 ● 2.1±0.1 High collector to emitter voltage VCEO.

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD1812

Abstract: 2SD1818 2SD1832 GV 269 2SD1816 2SD1817 2SD1819A 2SD1820 2SD1820A 2SD1821
Contextual Info: - 268 - mXËfè a g m îa=25°C, *EPfàTc=25'C • v-Bu Vc e o (V) (V) . m Ivvi/w Pc Pc* ICBO (A) (W) (W) (UA) O —A PA 160 160 1.5 0.9 2SD1S15 = m pstr 120 100 3 1 20 PSW 120 100 4 1 H # PD 80 60 3 1 10 2SD1817 W 1!È (V) (Ta=25cC) (V) [*EP(átyp{¡f]

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691