2SD1411 Search Results

2SB1018A

Abstract: 2SD1411A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.

2SD1411

Abstract: 2SB1018
Contextual Info: SavantIC Semiconductor Product Specification 2SD1411 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING

Contextual Info: 2SD1411A T O S H IB A 2 S D 1 411 A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • • ^3.2 ±0.2 2.7Ì0.2 Low Saturation Voltage : V^E s a t = 0-5V (Max.) at I0 = 4A

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

2SD1460

Abstract: 2SD1477 2SD1473 2sd1467 2SD1422 2sd1425 2SB1029 2SD1466 2SD1058 2SD1407
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1401 1500 7 3.5A 80W(Tc=25ºC) 150 25 5 500 3* 120W 2SD1402

Contextual Info: TOSHIBA 2SB1018 T O SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S 1 B 1 8 INDUSTRIAL APPLICATIONS /v Unit in mm HIGH CURRENT SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • • High Collector Current : l£ = —7A Low Collector Saturation Voltage

2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DISCRETE/OPTO D E J TGTVaSa □□□7TS1 fl I ~56C" 0 7 9 5 1 ' " 0 3 3 - SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q3MAX; POWER AMPLIFIER APPLICATIONS.- ^3.2±Qg "FEATURES:

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ~BÍ DE [ B O T O S O DODTBT? fl <DIS C R E T E /OPTO SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3MAX, 03.2*0.2 7.0 POWER AMPLIFIER APPLICATIONS. FEATURES: . High Collector Current : Ic=-7A

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SB1018A

Abstract: 2SD1411A
Contextual Info: TOSHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 0 1 8A HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • • • High Collector Current : Iq = —7A Low Collector Saturation Voltage : VCE (sat)~ —0.5y (Max.) (Ic = -4A )

Contextual Info: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)