2SD1410A Search Results

Contextual Info: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 4 1 OA IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • . 03.2 ± 0.2 2.7± 0.2 High DC Current Gain : hp’g = 2000 Min.

D1410A

Abstract: 2SD1410A
Contextual Info: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Maximum Ratings (Ta = 25°C) Characteristics

004AI

Contextual Info: TOSHIBA 2SD1410A TOSHIBA TRANSISTOR n SILICON NPN TRIPLE DIFFUSED TYPE n mmr u u mm m m m A ir m INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (V ç E = 2V, Iç = 2 A )

D1410A

Abstract: 2SD1410A
Contextual Info: 2SD1410A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1410A 通 信 工 業 用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)

2SD141

Abstract: 2SD1410A
Contextual Info: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 O A Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • r 10 ±0.3 -y 5< ÍY^ High DC Current Gain : hjpg = 2000 Min. o iV ' •nP = 2—V. •* Tn = 2 A}'

Contextual Info: TOSHIBA 2SD1410A 2 S D 1 4 1 OA TOSHIBA TRANSISTOR IGNITER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • High DC Current Gain : hpg = 2000 Min. ^3.2 ±0.2 2.7Í0.2 = 2V, I q = 2A)

D1410A

Abstract: 2SD1410A 2-10R1A
Contextual Info: 2SD1410A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1410A 通 信 工 業 用 ○ 高電圧スイッチング用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 2 A) 絶対最大定格 (Ta = 25°C)

D1410A

Abstract: 2SD1410A
Contextual Info: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)

2SD141

Abstract: 2SD1410A
Contextual Info: TO SHIBA 2SD1410A 2 S D 1 4 1 OA TO SHIBA TRANSISTOR IGNITER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SW ITCHING APPLICATIONS • High DC Current Gain : hp^ —2000 Min. (V£ e = 2V, Iq = 2A) INDUSTRIAL APPLICATIONS Unit in mm r <v> O)

D1410A

Abstract: 2SD1410A
Contextual Info: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics

D1410A

Contextual Info: 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1410A Industrial Applications High Voltage Switching Applications • Unit: mm High DC current gain: hFE = 2000 (min.) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2SK1045

Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905