2SD1409A Search Results

d1409a

Abstract: D1409 2SD1409A 2SD1409A equivalent
Contextual Info: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor

d1409a

Abstract: 2SD1409A
Contextual Info: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor

Contextual Info: TO SHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS. 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • • 1.1 M A X IM U M RATINGS (Ta = 25°C) EQUIVALENT CIRCUIT

2SD1409A

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • 03.2 ±0.2 2.7±0.2 High DC Current Gain * = 600 (Min.)

D1409A

Abstract: d1409 2SD1409A
Contextual Info: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor

d1409a

Contextual Info: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor

Contextual Info: 2SD1409A TOSHIBA TO SHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • 03.2 ± 0.2 2.7± 0.2 High DC Current Gain * = 600 (Min.)

Contextual Info: 2SD1409A TO SHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 7<;r>iAfiqA INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. 10 + 0.3 • • ç5 3.2± 0 .2 2 .7 1 0 .2 High DC Current Gain : hpg = 600 (Min.) (Vq e = 2V, I q = 2A)

d1409a

Abstract: 2SD1409A
Contextual Info: 2SD1409A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1409A 通 信 工 業 用 ○ 高電圧スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。

2SD1409A

Contextual Info: 2SD1409A TO SH IBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • = 600 (Min.) (VCE = 2 V, IC = 2 A) Monolithic Construction with Built-In Base-Emitter Shunt

2SD1409A equivalent

Abstract: 2SD1409A
Contextual Info: TO SHIBA IGNITER APPLICATIONS. 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS. • • High DC Current Gain : hpE = 600 (Min.) (V0 e = 2V, Ic = 2A) Monolithic Construction with Built-In Base-Emitter Shunt

d1409a

Abstract: 2SD1409A 100-C3000
Contextual Info: 2SD1409A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1409A 通 信 工 業 用 ○ 高電圧スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2SK1045

Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ