d1409a
Abstract: D1409 2SD1409A 2SD1409A equivalent
Contextual Info: D1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor
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2sd1409ad1409ad14092sd1409a equivalent |
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d1409a
Abstract: 2SD1409A
Contextual Info: D1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor
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2sd1409ad1409a |
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D1409A
Abstract: d1409 2SD1409A
Contextual Info: D1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor
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2sd1409ad1409ad1409 |
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d1409a
Contextual Info: D1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor
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2sd1409asc-67d1409a |
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d1409a
Abstract: 2SD1409A
Contextual Info: D1409A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ D1409A 通 信 工 業 用 ○ 高電圧スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。
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2sd1409asc-672-10r1a20070701-ja+1d1409a
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d1409a
Abstract: 2SD1409A 100-C3000
Contextual Info: D1409A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ D1409A 通 信 工 業 用 ○ 高電圧スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。
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2sd1409asc-672-10r1ad1409a+1100-c3000
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