b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340sb13752sk270a2sk150amg15g1al22sa1051bmg50g2cl1mg100g1al22sa1015a1265nmg100g1al1
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2SK 150A
Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340s2sk 150amg100g1al22sd13652sc2461 b2sk302sc102c366gb1375mg15g1al21265n
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BBC OS 0,9 4A
Abstract: 07380 bbc os 0.9 4A
Contextual Info: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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2sb9932sd1363200x200x2mma150xl50x2mm+7100x100x2mm70x70x2mma35x35xlmma25x25xlmmabbc os 0,9 4a07380bbc os 0.9 4a
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2SD1388
Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25
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2sd13012sd13022sd13032sd1304+152sd13052sd13062sd13072sd13082sd13092sd13102sd13882sd13872sd13702sd13692sd13312sd13602sd13462sd13332sd1371
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2SB553Y
Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15
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2sc31532sc35352sc31562sc3482+122sc34862sd14032sc3685sdt172032sd14562sb553yidb1019rca1c11bu606dsd14302n5849idb553
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D 871 Toshiba
Abstract: 2SB993 2SD1363
Contextual Info: TOSHIBA -CDISCRETE/0PT03- 9097250 T O S H IB A 5h DE~|TCn7250 □□□7cì3h 1 <D I S C R E T E / O P T O > SILICON NPN TRIPLE DIFFUSED TYPE. INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. _ POWER AMPLIFIER APPLICATIONS. 1 Û 3 M A X .
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-cdiscrete/0pt03-2sb993300x300x3mma200x200x2rmn+8150xi50xi3rama50x50x2rama35x35xlmmk85xa5xlmmaiiiilll111llltlltllttlltiltlllllllll111llllltllia11ltiltllld 871 toshiba2sd1363
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106daa1/sc-70ytf6122sk2381+15ytf8412sk2387ytf4422sk2149ytf613toshiba mg150n2ys40mg75n2ys40mg15n6es42mg150n2ys402sk150atoshiba s2530a2sk270amg8n6es42mg15g1al2mg75j2ys40
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2SB993
Abstract: 2SD1363 CL25
Contextual Info: 1Î T ^ U B Â ^ Ï D I S C R E T E / O P T O } 9097250 TOSHIBA DeJ^Q^SO bbC <D I S C R E T E / O P T O 07379 □ 0 D 7 B 7 cì t. | o r - 3 B - ;9 2SB993 S IL IC O N PNP T R IP L E D IF F U SE D TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS.
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2sb9932sd1363300x300x2mma200x200x2mma+6150x150x2mm100x100x2mma70x70xsmm35x35xlmma35x35ximmacl25
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2SD1363
Abstract: 2SB993
Contextual Info: TOSHIBA {DISCRETE/OPTO}- 9097250 TO SH IBA D ISC R ET E /O P T O SILICON NPN TRIPLE DIFFUSED TYPE. INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 1C13MAX. ^3.01013 FEATURES: . High Collector Current ! Ic=7A
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2sd13632sb993stora97250300x300x2mma+5200x200x2raii150xi50x2mma100x100x2mm50x50x2rama35x35xlmma
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mg75n2ys40
Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種
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02bz21s20921sz575902cz2+161s20942n305502cz51s2095a2n371302z24a1mmg75n2ys40mg15n6es422sk150a2sk270amg150n2ys40mg8n6es42mg15g1al2mg75j2ys40mg30g1bl2s2530a
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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mg75n2ys40
Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106daa1ytf8422sk2387ytf441+152sk2149ytf6132sk2381ytf843ytf442mg75n2ys402n3055 toshibamg150n2ys40tlr103toshiba 2n3055mg15n6es422sk150atoshiba mg150n2ys402sk270as2530a
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50V 1A power transistor
Abstract: 2SB993 2SD1363
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB993 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max)@ IC= -4A
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2sb9932sd136350v 1a power transistor |
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