2SD1257A Search Results

2SB934

Abstract: 2SD1257 2SD1257A
Contextual Info: Power Transistors 2SD1 257, 2SD1257A 2SD1257, 2S D 1257A Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching C om plem entary Pair w ith 2SB934 ■ Features • L ow c o lle c t o r - e m itte r sa tu r a tio n v o lta g e V<_e (Sat>

3004 IC

Abstract: 2SD1257 2SD1257A
Contextual Info: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm Collector-base voltage Emitter open Rating Unit VCBO 130 V 2SD1257A VCEO 14.4±0.5 3.0+0.4 –0.2 1 : Base 2 : Collector 3 : Emitter N-G1 Package 80 V Emitter-base voltage (Collector open)

2SD1257

Abstract: 2SD1257A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1257 Collector-base voltage (Emitter open) Symbol Rating Unit VCBO 130 V 2SD1257A 150 Collector-emitter voltage 2SD1257

2SB934

Abstract: 2SD1257 2SD1257A tf 130
Contextual Info: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB934 80 VCEO emitter voltage 2SD1257A 100 V Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm Collector-base voltage (Emitter open) Rating Unit VCBO 130 V 2SD1257A VCEO 14.4±0.5 3.0+0.4 –0.2 1 : Base 2 : Collector

2SD1257

Abstract: 2SB934 2SD1257A
Contextual Info: Power Transistors 2SD1257, 2SD1257A 2SD1257, 2SD1257A Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching C om plem enta ry Pair w ith 2SB934 ■ Features • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e V<_E (SJt>

2SB0934

Abstract: 2SB934 2SD1257 2SD1257A
Contextual Info: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0934 2SB934 V 100 Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C dissipation

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm Collector-base voltage (Emitter open) Rating Unit VCBO 130 V 2SD1257A VCEO 14.4±0.5 3.0+0.4 –0.2 1 : Base 2 : Collector

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1257

Abstract: 2SD1257A
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1257,2SD1257A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE sat . Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15

2SD1204

Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691