2SC89 Search Results

2SC898

Abstract: 2SA758
Contextual Info: JMnic Product Specification 2SA758 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC898 APPLICATIONS ・For 80W audio amplifier power output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2sc898

Abstract: hfe1 Audio Output Transistor Amplifier 2SA758 transistor 2sc898
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA758 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and

2sc898

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC898 Features • • With TO-3 package Amplifier applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC

Contextual Info: 2SC898 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)150 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC897

Abstract: 2SA757
Contextual Info: SavantIC Semiconductor Product Specification 2SA757 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC897 APPLICATIONS ·For audio amplifier power output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3

2SC890

Abstract: KSKT 2SC891 2sc892 2s*892
Contextual Info: 2SC892 2SC892 NPN ^> v7^/N PN SILICON EPITAXIAL TRANSISTOR Frequency Power Amplifier H S l H f f l / Industri aI Use 6 ^/FEATURES ftWm/PACKAGE • 400MHz P o = 8.0W TYP. VCo = 13.5V, P i= 3 .0 W , f = 500MHz M L b f t t z t z i ö , £ ffllÜ P tE E 9 ~ 1 8 V

Contextual Info: 2SC899 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)50 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC897

Abstract: 2SA757
Contextual Info: JMnic Product Specification 2SA757 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC897 APPLICATIONS ・For audio amplifier power output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol

2SC897

Abstract: 2SA757
Contextual Info: AOK AOK Semiconductor Product Specification 2SA757 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SC897 APPLICATIONS • For audio amplifier power output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC898

Abstract: 2SA758 80w audio
Contextual Info: SavantIC Semiconductor Product Specification 2SA758 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC898 APPLICATIONS ·For 80W audio amplifier power output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC897

Abstract: 2SA757
Contextual Info: Inchange Semiconductor Product Specification 2SA757 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC897 APPLICATIONS ·For audio amplifier power output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3

2SC898

Abstract: 2SA758
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA758 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and

Contextual Info: 2SC895-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)23 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

equivalent of transistor 8050

Abstract: 2SC734 equivalent Equivalent to transistor 2sc945 transistor 2SC710 transistor BC 337 transistor 2SC711 bc 8050 8050 equivalent 2sc828 equivalent 2SC711
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC621 HN / BC 548 / 9014 2SC754 HN / BC 548 / 9014 2SC950 HN / BC 548 / 9014 2SC622 HN / BC 548 / 9014

STC1015E

Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC2291

Abstract: 2SC1740 R 2SC458LG B 2SC945 2SC1345 2sc458 2SC2412K 2SC458lg 2SC4453 2SC1685
Contextual Info: - S € Type No. 2SC 1619A tt € Manuf. 2SC 1620 2SC 1621 2SC 1622 2 SC 1622A 2SC 2SC 2SC 2SC 2SC 1623 1624 1625 1626 1627 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1627A 1628 1629 ^ 1630 1631 1632 1633 1634 1635 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1636 ^ 1637 ^ 1638

MA7805

Abstract: BC128 2S746 BSY37 2S745 2SC183 OC740 PMT120 SAC40
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

2SC102 transistor

Abstract: 2N2342 2sc102 TK30556 2N2902 M10A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

2n3604 transistor

Abstract: 2N1103 NKT102 2N123 2SC175 2SC176 2SC177 2SC73 2SC75 CK26A
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TEC H NICA L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol % ' (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2SC124

Abstract: MT1711 AT330 BF197-01 2sC103 transistor SJ2520 2SC122 2sc103 SE5010 2SC104
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: J , One. \-S 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA758 DESCRIPTION • High Power Dissipation: Pc= 80W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage:V(BR)cEo=-110V(Min.)