2SC6076 Search Results
2SC6076 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SC6076 | Toshiba | Silicon NPN Epitaxial Type (PCT Process) | Original | 171.58KB | 5 | ||
| 2SC6076(TE16L1,NV) | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 80V 3A PW MOLD | Original | 197.25KB |
2SC6076 Price and Stock
Toshiba America Electronic Components 2SC6076(TE16L1,NV)Trans GP BJT NPN 80V 3A 10000mW 3-Pin(2+Tab) New PW-Mold T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC6076(TE16L1,NV) | 815 | 9 |
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Buy Now | ||||||
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2SC6076(TE16L1,NV) | 2,780 |
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Buy Now | |||||||
2SC6076 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2SC6076Contextual Info: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) |
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2sc6076 | |
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Contextual Info: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) |
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2sc6076 | |
2SC6076
Abstract: IC602
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2sc607620070701-jaic602 | |
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Contextual Info: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 µs (typ) |
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2sc6076 | |
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Contextual Info: 2SC6076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6076 電力増幅用 電力スイッチング用 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) スイッチング時間が速い。 |
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2sc6076 | |
C6076
Abstract: 2SC6076 wd-c160
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2sc6076c6076wd-c160 | |
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Contextual Info: Reliability Tests Report Product Name: 2SC6076 Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s |
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2sc6076 | |
2SC6076Contextual Info: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 s (typ) |
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2sc6076 | |
circuit diagram of luminous inverter
Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
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bce0013ccircuit diagram of luminous invertertc7600fngsine wave pwm dc to ac inverter ics+7 | |
fast tlp785
Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
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sce0024ffast tlp785tk10a60d5252 f solar+2 | |
GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
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sce0004lttc41162sc4118tta1586+16 | |
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
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scj0004rsc-432sc18152sc732tm+14 | |
2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
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bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+7 | |
tb6584
Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
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tlcs-870/c1sce0013be-28831sce0013c+10 | |
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
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2010/9sce0004ksc-432sc1815700the+10 | |
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
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sc-432sc1815tps615tps616+11 | |
2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
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bce0016f2sa1941 amp circuit2sc33032sd880+7 | |
2SC6087
Abstract: DC24V TK40P03M1 TK40P04M1 TK50P03M1 TK50P04M1 TK40P03M UMOS TK40P04M
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d-paktk50p03m1tk40p03m1d-paktk50p04m1tk40p04m1+9 | |
gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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sce0024ggt50jr22fast tlp785toshiba bipolar power transistor+5 | |
TC94A70FG
Abstract: TC90507XBG TMPA8873 tb1307fg TC90512XBG TB1318FG tb2926hq Toshiba TMPA8873 TB2926 TC90507
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tb7004fltb6814lgtc7705fngscj0015c+11 | |
2sC5200, 2SA1943
Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
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ttc003sc-64bcj0016fbcj0016e+9 | |
TC7600FNG
Abstract: TMP91FU62 TB6584FNG TB6819 TA2181AFNG TK5A50D 2SK3767 TB6674 fag 23 mg TB6575FNG
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tmpm370/tmp19a71gt30j122dc1i583scj0013d+11 | |
DC24V
Abstract: TK40P03M1 TK40P04M1 TK50P03M1 TK50P04M1 2sc606 TK40P03M TJ20A10M3
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d-paktk50p03m1tk40p03m1d-paktk50p04m1tk40p04m1+8 | |
GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
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scj0004osc-432sc18152sc732tm+14 | |