C6076 Search Results
C6076 Price and Stock
TE Connectivity 55PC6076-26-9/96CS3109- Bag (Alt: C94944-000) |
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55PC6076-26-9/96CS3109 | Bag | 25 Weeks | 2,000 |
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55PC6076-26-9/96CS3109 |
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55PC6076-26-9/96CS3109 | 1 |
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55PC6076-26-9/96CS3109 |
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Toshiba America Electronic Components 2SC6076(TE16L1,NV)Bipolar Transistors - BJT Pwr Transtr Hi-Speed New PW-Mold |
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2SC6076(TE16L1,NV) | 2,780 |
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Essentra Components HC6076AMounting Hardware HOOK - C STYLE:SPRING STEEL |
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HC6076A |
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HC6076A |
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Marathon Motors GT1005 (182TTFC6076)AC MOTOR, 1.50 HP GENERAL PURPOSE MOTOR, 3 PHASE, 1200 RPM, 230/460 V, 182T FRA |
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GT1005 (182TTFC6076) | Bulk | 4 Weeks | 1 |
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Panasonic Electronic Components ERJ-PB3B2102VThick Film Resistors - SMD 0603 Anti-Surge Res. 0.1%, 21Kohm |
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ERJ-PB3B2102V | Reel | 5,000 | 5,000 |
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C6076 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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C6076Contextual Info: CATALOG MICRO SWITCH SWITCH-BASIC a Honeywell Division F E D .M F G .C O D E LISTIN G V 7 -7 A 1 9 D 8 CW -C6076 9 1929 00 û Ö < h Ll_ ° - _ I ^ Q * > < CL CN R E V I S I ONS A 0085964 SBH 30JAN12 ANSI Y14.5M — 1982 APPLIES THI RD A N G L E P R O J E C T I O N |
OCR Scan |
-c607630jan12c6076 | |
2SC6076Contextual Info: C6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) |
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2sc6076 | |
GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
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sce0004lttc41162sc4118tta1586+16 | |
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
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scj0004rsc-432sc18152sc732tm+14 | |
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Contextual Info: C6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) |
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2sc6076 | |
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Contextual Info: C6076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C6076 電力増幅用 電力スイッチング用 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) スイッチング時間が速い。 |
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2sc6076 | |
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
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2010/9sce0004ksc-432sc1815700the+10 | |
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
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sc-432sc1815tps615tps616+11 | |
C6076
Abstract: 2SC6076 wd-c160
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2sc6076c6076wd-c160 | |
C6073
Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
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rp1150rp1151rp2450rp3510+16 | |
c6073
Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
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rp6152rp6158rp6159rp6707+16 | |
PANASONIC C6073
Abstract: c6073 C6074 INVENTEC c6067 bq24721 fds8884 FDS6900AS Cross Reference GMT916 alc889
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1310a2207301-0-mtrsw7005s7001s7002+16 | |
PANASONIC C6073
Abstract: c6073 D7011 c6067 C6098 alc889 bq24721 C6151 INVENTEC fds8884
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1310a2207301-0-mtrsw7005s7001s7002+16 | |
GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
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scj0004osc-432sc18152sc732tm+14 | |
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*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
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scj0004osc-432sc18152sc732tm+14 | |