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    C6076 Search Results

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    TE Connectivity 55PC6076-26-9/96CS3109

    - Bag (Alt: C94944-000)
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    Avnet Americas 55PC6076-26-9/96CS3109 Bag 25 Weeks 2,000
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    Mouser Electronics 55PC6076-26-9/96CS3109
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    Sager 55PC6076-26-9/96CS3109 1
    • 1 $8.57
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    Interstate Connecting Components 55PC6076-26-9/96CS3109
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    Master Electronics 55PC6076-26-9/96CS3109
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    Toshiba America Electronic Components 2SC6076(TE16L1,NV)

    Bipolar Transistors - BJT Pwr Transtr Hi-Speed New PW-Mold
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    Mouser Electronics 2SC6076(TE16L1,NV) 2,780
    • 1 $0.96
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    Essentra Components HC6076A

    Mounting Hardware HOOK - C STYLE:SPRING STEEL
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    Mouser Electronics HC6076A
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    DB Roberts HC6076A
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    Marathon Motors GT1005 (182TTFC6076)

    AC MOTOR, 1.50 HP GENERAL PURPOSE MOTOR, 3 PHASE, 1200 RPM, 230/460 V, 182T FRA
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    RS GT1005 (182TTFC6076) Bulk 4 Weeks 1
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    Panasonic Electronic Components ERJ-PB3B2102V

    Thick Film Resistors - SMD 0603 Anti-Surge Res. 0.1%, 21Kohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI ERJ-PB3B2102V Reel 5,000 5,000
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    C6076 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C6076

    Contextual Info: CATALOG MICRO SWITCH SWITCH-BASIC a Honeywell Division F E D .M F G .C O D E LISTIN G V 7 -7 A 1 9 D 8 CW -C6076 9 1929 00 û Ö < h Ll_ ° - _ I ^ Q * > < CL CN R E V I S I ONS A 0085964 SBH 30JAN12 ANSI Y14.5M — 1982 APPLIES THI RD A N G L E P R O J E C T I O N


    OCR Scan
    -c607630jan12c6076 PDF

    2SC6076

    Contextual Info: C6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.)


    Original
    2sc6076 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    Contextual Info: C6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.)


    Original
    2sc6076 PDF

    Contextual Info: C6076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C6076 電力増幅用 電力スイッチング用 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) スイッチング時間が速い。


    Original
    2sc6076 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122 PDF

    C6076

    Abstract: 2SC6076 wd-c160
    Contextual Info: C6076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C6076 電力増幅用 電力スイッチング用 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) スイッチング時間が速い。


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    2sc6076c6076wd-c160 PDF

    C6073

    Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
    Contextual Info: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


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    rp1150rp1151rp2450rp3510+16rp3511rp3512rp3513rp3514rp3990rp4800c6073sil1178c6074c9013nec c3568c4793c5885k769c609015b1 zener diode PDF

    c6073

    Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
    Contextual Info: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original
    rp6152rp6158rp6159rp6707+16rp6708rp6709rp6710rp6720rp6721rp6722c6073c6074c6091c60891ca033ar9103sil1178nec c3568c6092u2390 PDF

    PANASONIC C6073

    Abstract: c6073 C6074 INVENTEC c6067 bq24721 fds8884 FDS6900AS Cross Reference GMT916 alc889
    Contextual Info: Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo.com, c=US Date: 2009.11.29 07:54:50 +07'00' www.kythuatvitinh.com KiliManjaro 2.0 Montevina DDR3 Pre-MV Build 2008.06.19 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV


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    1310a2207301-0-mtrsw7005s7001s7002+16s7000fix7502fix7500fix501fix7002fix7001panasonic c6073c6073c6074inventecc6067bq24721fds8884fds6900as cross referencegmt916alc889 PDF

    PANASONIC C6073

    Abstract: c6073 D7011 c6067 C6098 alc889 bq24721 C6151 INVENTEC fds8884
    Contextual Info: KiliManjaro 2.0 Montevina DDR3 Pre-MV Build 2008.06.19 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : KiliManjaro 2.0(Montevina) SIZE CODE A3 CS SHEET DOC. NUMBER


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    1310a2207301-0-mtrsw7005s7001s7002+16s7000fix7502fix7500fix501fix7002fix7001panasonic c6073c6073d7011c6067c6098alc889bq24721c6151inventecfds8884 PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa970gt45f122tk13a60ugt30f1232sk4207gt30j124igbt gt30f123gt30f122gt30g1222sc5471igbt gt30j124 PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    scj0004osc-432sc18152sc732tm+142sc19592sa10152sc22402sa97045f122gt30f12430g12230f124igbt gt30f124gt30j124gt45f122gt30f123tpca*8023gt50n322 PDF