T88 NEC
Abstract: 2SC5191-T1B 2sc5191
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
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transistor marking S00
Abstract: nec 2412 nec 2035 728
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • PACKAGE DRAWINGS Unit: mm Low Voltage Operation, Low Phase Distortion • 2.8±0.2 Low Noise 1.5 NF = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz
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2sc5191sc-592sc5191-t2transistor marking s00+2nec 2412nec 2035 728
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2SC5191
Abstract: nec 2035 744 2SC5191-T1 2SC5191-T2 nec 2412 transistor 2203
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Unit: mm • Low Voltage Operation, Low Phase Distortion 2.8±0.2 0.4 +0.1 −0.05 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
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2sc5191sc-592sc5191-t12sc5191-t2+3nec 2035 744nec 2412transistor 2203
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Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise PACKAGE DRAWINGS Unit: mm 2 .8 ± 0.2 1.5 NF = 1 .5 dB TYP. @ V ce = 3 V , Ic = 7 mA, f = 2 GHz
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2sc5191sc-592sc5191-t12sc5191-t2+1fa228
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Vo 80500 TRANSISTOR
Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A
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ne688ot-143packageoutune39rne68818-t1+15ne68819-t1ne68830-t1ne68833-t1ne68839-t1ne68839r-t1vo 80500 transistorst 80500ap 4606st 80500 transistorq 1257transistor ir 93422110 transistorne68819sot143 l030828 30400
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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od-80od123/323ot-23ot346+16ot-323ot-416ot-223ot-89ot-143ot-363smd code booktransistor smd p1fmarking code w16 smd transistortransistor smd marking code jgsmd transistor ww1transistor smd a7sdiode smd l4wsmd diode zener code pj 78smd transistor wv4motorola transistor smd marking codes
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77
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2SK2396
Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器(µ PCx×××,µPG××××) 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数
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x13769xj2v0cd00pc8119tpc8120tpc8130ta+16pc8131tapg175tapc2723tpc3206grpc2748pc27452sk2396pc2763pc1658ne272832sc35452sc33572sc2757ne932392sc2570apc2711
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uPD16305
Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd16305upd63724aupc5024upc50232sc1940upc1237upd65656upc458upc2710upd65943
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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x13769xj2v0cd00950mhz500mhzpc2794+13pc1687pc2744pc2775/nf025ne27283upc27x-band power transistor 100wne42484p147d2sk2396upg508nf025db2sc5408
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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pu10015ej04v0pftransistor marking t79 ghzmarking code c1h mmicmarking code c3e sot-89+7upb1507marking code c1g mmicmarking code c1e mmicdata book transistors 2saupc2712pc3215transistor 2sa data book
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249mmbd2103zener diode t2dmmbd2101mmbd2102mmbd2104smd codesbc107 transistor smd code package sot23transistor nec 05fbat15-115snds358n
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249smd codestransistor smd t1pmmbd2104baw92smd transistor a6aschottky diode s6 81aa4s smd transistortransistor smd a7stransistor smd p2fmmbd2101
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NE68830-T1-A
Abstract: 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68819 NE68830 NE68833 131300
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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p14740ee5v0pf00marking code c1e smd transistortransistor smd marking code s01fmcw radar+7transistor smd c1yne92039g2b 6-pin smdne582m03ne3210so1smd transistor g1-lsmd code marking nec 817
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NE68819
Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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ne688ne68833-t1ne68839-t1ne68839r-t1+9ne68819ic ne 5532ls 1017bjt bf 3312sc51932sc51942sc5195ne68818ne68830
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BJT BF 331
Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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ne688ne68800ne68818-t1ne68819-t1+13ne68830-t1ne68833-t1ne68839-t1ne68839r-t1bjt bf 331ne68819ne68833ne688 series901 704 16 08 552sc51912sc51932sc51942sc5195
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2SC5743
Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570
Contextual Info: 高周波半導体デバイス Microwave Semiconductor Devices W-CDMA用IC(ICs for W-CDMA) ・W-CDMA用にシリコン/GaAs MMICを開発中 ・小型ミニモールドやリードレスQFNなど実装面積の削減に有効なパッケージに搭載
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pc8190/8191krx-ifpc8194/8195krx-ifpg2124th10tssop+1210-pinfax044435-96082sc57432sc56002sc55332sc56932sc56782sc57442sc40912sc59372sc57472sc2570
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80500 TRANSISTOR
Abstract: LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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ne688ne68818-t1ne68819-t1ne68830-t1+14ne68833-t1ne68839-t1ne68839r-t134-6393/fax80500 transistorlb 16394435027p157600ne688182sc51912sc51932sc51942sc5195
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uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. [検索]ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して, 検索 F を クリックしてください。
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd72002-11upd16305upc1237upc1701upd656562sd13922sb1099upd65625upd78f0841upg508
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