NE688 Search Results

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1

NEC 1357

Contextual Info: NONLINEAR MODEL Q1 CCBPKG SCHEMATIC NE68833 CCB LCX LBX Collector LB Base CCE CBEPKG CCEPKG LE LEX Emitter BJT NONLINEAR MODEL Parameters Q1 PARAMETERS 1 Parameters Q1 UNITS Parameter Units time seconds farads IS 3.8e-16 MJC 0.48 capacitance BF 135.7 XCJC

NE688

Abstract: S21E UPA814T UPA814T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA

2SC5651

Abstract: NE688 NE688M23 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height

32E-12

Abstract: 32e12 35E16
Contextual Info: NONLINEAR MODEL SCHEMATIC NE688M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 capacitance farads BF 135.7 XCJC 0.56 inductance henries

Vo 80500 TRANSISTOR

Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A

NEC 1357

Abstract: 1357 transistor NEC nec transistor 1357 transistor NEC 1357
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

S21E

Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA

bjt microwave GHz

Abstract: BJT IC Vce 38E-16
Contextual Info: NE68800 NONLINEAR MODEL SCHEMATIC Q1 CCB LB LC CCE LE BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 time seconds BF 135.7 XCJC 0.56 capacitance farads henries NF 1 CJS inductance VAF 28 VJS 0.75 resistance

Contextual Info: NONLINEAR MODEL NE68818 SCHEMATIC CCBPKG CCB LCX LBX LB Collector LC CCE Base CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 0.56 BF 135.7 XCJC NF 1 CJS VAF 28 VJS 0.75 IKF 0.6 MJS ISE 3.8e-15

8003* transistor

Abstract: UPA814T UPA814T-T1 NE688 S21E transistor C 110 transistor f 20 nf
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz

NE68830-T1-A

Abstract: 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68819 NE68830 NE68833 131300
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 2 . 1 + 0.1 LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz -

NE68819

Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

NE688M13

Abstract: EIAJ 2SC5616 NE688 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS Units in mm FEATURES • • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –

NE688

Abstract: S21E UPA814T UPA814T-T1 UPA814T-T1-A
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA

80500 TRANSISTOR

Abstract: LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

2SC5437

Abstract: NE688 NE688M03 S21E 15E14
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • PACKAGE OUTLINE M03

Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ . SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package * LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: f t = 9 GHz . HIGH COLLECTOR CURRENT: 100 mA UPA809T

LM 4863 D

Abstract: LD 7576 OS TI01W IC sj 4558 sj 4558 lm/ITE 8987 transistor LT 6225 sj 2518 CI sj 4558 lt 6225
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1 .5 dB at 2.0 GHz . LOW VOLTAGE OPERATION . LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER

Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA

BR 123

Abstract: NE68819 03E-12
Contextual Info: NONLINEAR MODEL SCHEMATIC CCBPKG 0.08 pF NE68819 Q1 CCB LBX LCX 0.24 pF LB CCE 0.27 pF Base 0.19 nH 1.12 nH CBEPKG 0.3 pF LE 0.6 nH 0.5 nH Collector CCEPKG 0.3 pF LEX 0.19 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter

LB 1639

Abstract: C 4804 transistor
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

4 ghz transistor

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance