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    2SC519 Search Results

    2SC519 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SC5198
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Datasheet

    2SC519 Datasheets (101)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC519
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 63.17KB 1
    2SC519
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 44.21KB 1
    2SC519
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 87.11KB 1
    2SC519
    Unknown Transistor Replacements Scan PDF 74.04KB 1
    2SC519
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.21KB 1
    2SC519
    Unknown Cross Reference Datasheet Scan PDF 37.78KB 1
    2SC519
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 115.25KB 1
    2SC519
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.5KB 1
    2SC519
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 213.91KB 2
    2SC519
    Unknown The Japanese Transistor Manual 1981 Scan PDF 107.83KB 2
    2SC519
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 100.5KB 1
    2SC519
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 124.63KB 1
    2SC519
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.84KB 1
    2SC5190
    Panasonic Silicon NPN epitaxial planer type Original PDF 36.51KB 2
    2SC5190
    Panasonic NPN Transistor Original PDF 46.76KB 3
    2SC5190
    Panasonic Silicon NPN epitaxial planar type transistor Original PDF 78.36KB 3
    2SC5190
    Unknown Japanese Transistor Cross References (2S) Scan PDF 39.08KB 1
    2SC5190
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.27KB 1
    2SC5190
    Panasonic Transistor Selection Guide Scan PDF 54.35KB 1
    2SC5191
    NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR Original PDF 63.25KB 12
    SF Impression Pixel

    2SC519 Price and Stock

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    Toshiba America Electronic Components 2SC5199-O(Q)

    2SC5199-O(Q)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SC5199-O(Q) 191 38
    • 1 -
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    • 100 $1.71
    • 1000 $1.71
    • 10000 $1.71
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    Verical () 2SC5199-O(Q) 180 37
    • 1 -
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    • 100 $1.93
    • 1000 $1.93
    • 10000 $1.93
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    2SC5199-O(Q) 11 11
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    • 100 $7.16
    • 1000 $7.16
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    Quest Components 2SC5199-O(Q) 152
    • 1 $3.83
    • 10 $3.83
    • 100 $2.36
    • 1000 $2.36
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    Sirectifier 2SC5196B2

    Transistor: NPN; bipolar; 120V; 6A; TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SC5196B2 1
    • 1 $3.98
    • 10 $2.24
    • 100 $1.41
    • 1000 $1.04
    • 10000 $1.04
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    Toshiba America Electronic Components 2SC5198-O(Q)

    Trans GP BJT NPN 140V 10A 100000mW 3-Pin(3+Tab) TO-3PN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () 2SC5198-O(Q) 300 35
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    • 100 $2.01
    • 1000 $1.95
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    2SC5198-O(Q) 25 3
    • 1 -
    • 10 $1.30
    • 100 $1.09
    • 1000 $0.99
    • 10000 $0.99
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    Win Source Electronics 2SC5198-O(Q) 13,760
    • 1 -
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    • 100 $0.95
    • 1000 $0.74
    • 10000 $0.74
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    Toshiba America Electronic Components 2SC5199-R(Q)

    Trans GP BJT NPN 160V 12A 3-Pin(3+Tab) TO-3PL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC5199-R(Q) 1 1
    • 1 $71.94
    • 10 $71.94
    • 100 $71.94
    • 1000 $71.94
    • 10000 $71.94
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    Renesas Electronics Corporation 2SC5195-T1

    Trans RF BJT NPN 6V 0.1A 3-Pin Ultra Super Mini-Mold T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SC5195-T1 50,700
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    2SC519 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1941

    Abstract: 2SC5198
    Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 PO W ER AMPLIFIER APPLICATIONS. • • U n it in mm Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage


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    2sc51982sa1941 PDF

    2SC519

    Abstract: 2SA656
    Contextual Info: AOK AOK Semiconductor P ro d u c t S p e c ific a tio n 2SA656 S ilicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC519 APPLICATIONS • For audio frequency and power amplifier applications


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    2sa6562sc519-130v220max+113max PDF

    2SA1939

    Abstract: 2SC5196
    Contextual Info: 2SA1939 TO SHIBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X . • • Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. 0 3 .2 ± 0 .2 %


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    2sa19392sc51962-16c1a--50ma+1100ms PDF

    Toshiba transistor A1939

    Abstract: a1939 2SA1939 2SC5196 40w amplifier
    Contextual Info: 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristics


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    2sa19392sc51962-16c1atoshiba transistor a1939+2a193940w amplifier PDF

    2-21F1A

    Abstract: 2SA1942 2SC5199
    Contextual Info: 2SA1942 東芝トランジスタ シリコンPNP三重拡散形 2SA1942 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = −160 V 最小 • 2SC5199 とコンプリメンタリになります。 • 80 W ハイファイオーディオアンプ出力段に最適です。


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    2sa19422sc51992-21f1a20070701-ja PDF

    2SC5198

    Abstract: 2SA1941 2SC5198 2sa1941 2SA1941 equivalent
    Contextual Info: SavantIC Semiconductor Product Specification 2SC5198 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage


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    2sc51982sa19412sc5198 2sa19412sa1941 equivalent PDF

    2SA1939

    Abstract: 2SC5196 2SC519
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 APPLICATIONS ·Power amplifier applications


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    2sa19392sc51962sc519 PDF

    Contextual Info: 2SA1941 TO SHIBA 2 S A 1 941 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X ^ . • • 03.2 ± 0 .2 Complementary to 2SC5198 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage M A X IM U M RATINGS Ta = 25°C


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    2sa19412sc51982-16c1a-140v PDF

    Contextual Info: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.


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    2sc519a2sc520a2sc521a00d7l PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    2sc5198

    Contextual Info: 2SC5198 東芝トランジスタ シリコンNPN三重拡散形 2SC5198 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 140 V 最小 • 2SA1941 とコンプリメンタリになります。 • 70 W ハイファイオーディオアンプ出力段に最適です。


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    2sc51982sa1941 PDF

    2SA1939

    Abstract: 2SC5196 SC-65
    Contextual Info: 2SC5196 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1939 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2sc5196sc-652sa1939 PDF

    Contextual Info: Reliability Tests Report Product Name: 2SC5198 Package Name: TO-3P N 1. Thermal tests Test Item Heat resistance (Flow) Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C Immersion time : 10 s (Up to 1.5mm from the Root shall be immersed)


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    2sc5198 PDF

    transistor a708

    Abstract: A1549 a708 transistor transistor A608
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • Low Voltage Operation, Low Phase Distortion • Low Noise


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    pa814t2sc5193pa814t-t1transistor a708+3a1549a708 transistortransistor a608 PDF

    a1940

    Abstract: Toshiba transistor A1940 toshiba a1940 2SA1940 2SC5197
    Contextual Info: 2SA1940 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Maximum Ratings Tc = 25°C Characteristics


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    2sa19402sc5197a1940toshiba transistor a1940+1toshiba a1940 PDF

    toshiba audio power amplifier

    Abstract: 2SA1940 2SC5197
    Contextual Info: 2SA1940 TO SH IBA 2 S A 1 940 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


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    2sa19402sc51972-16c1avcb----120v+1toshiba audio power amplifier PDF

    2sc5194-t1

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz


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    2sc51942sc5194-t22sc5194-t1 PDF

    C 829 transistor

    Abstract: nec 1441 3906 npn lc 2581 v zo 107 NA P 938 nec 501 t
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING • Low Voltage Operation, Low Phase Distortion • Low Noise Units: mm NF = 1.5 dB TYP. @ Vce = 3 V, Ic = 7 mA, f = 2 GHz


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    2sc5193sc-702sc5193-t12sc5193-t2+6c 829 transistornec 14413906 npnlc 2581 vzo 107 na p 938nec 501 t PDF

    Transistor C 1279

    Abstract: UPA814T-T1
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /iPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion • Low Noise (U n it: m m )


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    upa814t2sc5193pa814ttransistor c 1279+1upa814t-t1 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5198 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z Low Collector Saturation Voltage z Good Linearity of hFE 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications


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    2sc5198 PDF

    2SC5199

    Abstract: 2-21F1A 2SA1942
    Contextual Info: TOSHIBA 2SC5199 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. “ of


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    2sc51992sa19422-21f1a PDF

    2Sc5197

    Abstract: Collector 5v npn TRANSISTOR hfe1 Audio Output Transistor Amplifier audio NPN npn power amplifier circuit transistor Ic 1A datasheet NPN 2SA1940 2SA194 2SC51
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications


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    2sc51972sa1940collector 5v npn transistorhfe1+6audio output transistor amplifieraudio npnnpn power amplifier circuittransistor ic 1a datasheet npn2sa1942sc51 PDF

    ic 4074

    Abstract: 2SC5437 2SC5195 2SC5437-T1
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5195 • Flat-lead 3-pin thin-type ultra super minimold package


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    2sc54372sc51952sc5437-t1ic 4074 PDF

    IC 751 1124

    Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 QUANTITY PACKING STYLE


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    2sc51942sc5194-t12sc5194-t2ic 751 1124 PDF