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    2SA194 Search Results

    2SA194 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1943
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet
    2SA1941
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-140 V / IC=-10 A / hFE=55~160 / VCE(sat)=-2.0 V / TO-3P(N) Datasheet

    2SA194 Datasheets (81)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA194
    Unknown The Japanese Transistor Manual 1981 Scan PDF 104.55KB 2
    2SA194
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.61KB 1
    2SA194
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 91.8KB 1
    2SA194
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 42.81KB 1
    2SA194
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 81.66KB 1
    2SA194
    Unknown Cross Reference Datasheet Scan PDF 38.11KB 1
    2SA1940
    Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(50W); Part Number: 2SC5197 Original PDF 120.25KB 4
    2SA1940
    Unknown Silicon PNP Transistor Scan PDF 149.67KB 2
    2SA1940
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.62KB 1
    2SA1940
    Unknown Japanese Transistor Cross References (2S) Scan PDF 33.81KB 1
    2SA1940
    Toshiba Silicon PNP transistor for power amplifier applications. Recommended for 55W high fidelity audio frequency amplifier output stage Scan PDF 173.79KB 3
    2SA1940
    Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF 173.91KB 3
    2SA1940O
    Toshiba Silicon PNP Triple Diffused Transistor Scan PDF 173.91KB 3
    2SA1940R
    Toshiba Silicon PNP Triple Diffused Transistor Scan PDF 173.9KB 3
    2SA1941
    Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(70W); Part Number: 2SC5198 Original PDF 128.96KB 4
    2SA1941
    Unknown Silicon PNP Transistor Scan PDF 148.78KB 2
    2SA1941
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.62KB 1
    2SA1941
    Unknown Japanese Transistor Cross References (2S) Scan PDF 33.81KB 1
    2SA1941
    Toshiba Silicon PNP transistor for power amplifier applications. Recommended for 70W high fidelity audio frequency amplifier output stage Scan PDF 172.87KB 3
    2SA1941
    Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF 173.23KB 3
    SF Impression Pixel

    2SA194 Price and Stock

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    onsemi 2SA1943OTU

    Power Bipolar Transistor 17A I(C) 250V V(BR)CEO 1-Element PNP Silicon TO-264AA Plastic/Epoxy 3 Pin
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    Master Electronics 2SA1943OTU 375
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    Onlinecomponents.com 2SA1943OTU 375
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    FAIRCHILD 2SA1943RTU

    Trans GP BJT PNP 250V 17A 150000mW 3-Pin(3+Tab) TO-264 Tube
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    Verical 2SA1943RTU 1,688 105
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    onsemi 2SA1943RTU

    Trans GP BJT PNP 250V 17A 150000mW 3-Pin(3+Tab) TO-264 Tube
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    Avnet Americas 2SA1943RTU Tube 375
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    Rochester Electronics 2SA1943RTU 1,494 1
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    Flip Electronics 2SA1943RTU 1,003
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    Toshiba America Electronic Components 2SA1942-O(Q)

    Trans GP BJT PNP 160V 12A 120000mW 3-Pin(3+Tab) TO-3PL Tray
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    Verical 2SA1942-O(Q) 760 38
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    Quest Components 2SA1942-O(Q) 608
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    Toshiba America Electronic Components 2SA1941-O(Q)

    Trans GP BJT PNP 140V 10A 100000mW 3-Pin(3+Tab) TO-3PN
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    Newark 2SA1941-O(Q) Bulk 1
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    2SA194 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sa1943 toshiba transistor

    Contextual Info: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.


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    2sa19432sc52002-21f1a-230v+12sa1943 toshiba transistor PDF

    tr 2sc5200

    Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
    Contextual Info: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


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    2sc52002sa19432-21f1atr 2sc5200+3power amplifier 2sc5200 2sa1943 transistortransistor 2sc5200tr 2sa1943 PDF

    2SA1941

    Abstract: 2SC5198
    Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 PO W ER AMPLIFIER APPLICATIONS. • • U n it in mm Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage


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    2sc51982sa1941 PDF

    marking aae

    Abstract: marking aag smd AAE smd marking AAE 2SA1946 hFE CLASSIFICATION Marking smd ic marking aae
    Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1946 Features Low collector saturation voltage VCE sat =-0.25V typ High fT: fT=180MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1A Small package for mounting Absolute Maximum Ratings Ta = 25


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    2sa1946180mhz-100ma-500ma+8-25ma-10mamarking aaemarking aagsmd aaesmd marking aaehfe classification markingsmd ic marking aae PDF

    2-21F1A

    Abstract: 2SA1942 2SC5199
    Contextual Info: 2SA1942 東芝トランジスタ シリコンPNP三重拡散形 2SA1942 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = −160 V 最小 • 2SC5199 とコンプリメンタリになります。 • 80 W ハイファイオーディオアンプ出力段に最適です。


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    2sa19422sc51992-21f1a20070701-ja PDF

    Contextual Info: IC SMD Type Product specification 2SA1947 Features High fT: fT=100MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1.5A Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol Rating


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    2sa1947100mhz-500ma-25ma+1-10ma PDF

    Contextual Info: IC SMD Type Product specification 2SA1946 Features Low collector saturation voltage VCE sat =-0.25V typ High fT: fT=180MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1A Small package for mounting Absolute Maximum Ratings Ta = 25


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    2sa1946180mhz-100ma-500ma+2-25ma-10ma PDF

    Contextual Info: IC SMD Type Product specification 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


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    2sa1945150mhz600ma-100ma+2-200ma-10ma PDF

    2SC5198

    Abstract: 2SA1941 2SC5198 2sa1941 2SA1941 equivalent
    Contextual Info: SavantIC Semiconductor Product Specification 2SC5198 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage


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    2sc51982sa19412sc5198 2sa19412sa1941 equivalent PDF

    Contextual Info: 2SA1941 TO SHIBA 2 S A 1 941 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X ^ . • • 03.2 ± 0 .2 Complementary to 2SC5198 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage M A X IM U M RATINGS Ta = 25°C


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    2sa19412sc51982-16c1a-140v PDF

    2sC5200, 2SA1943

    Abstract: 2sa1943 amplifier 2SC5200 2sc5200 amplifier circuit
    Contextual Info: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1943 Features • • • PNP Silicon Power Transistors Silicon PNP triple diffused type Complementary to 2SC5200 Recommended for 100W high fidelity audio frequency amplifier


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    2sa19432sc52002sc5200, 2sa19432sa1943 amplifier+12sc5200 amplifier circuit PDF

    2sc5198

    Contextual Info: 2SC5198 東芝トランジスタ シリコンNPN三重拡散形 2SC5198 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 140 V 最小 • 2SA1941 とコンプリメンタリになります。 • 70 W ハイファイオーディオアンプ出力段に最適です。


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    2sc51982sa1941 PDF

    pc 525

    Abstract: 2SA1941
    Contextual Info: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC5198 Features • • • Silicon NPN triple diffused type Complementary to 2SA1941 Recommended for 70W high fidelity frequency amplifier output stage


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    2sc51982sa1941pc 525 PDF

    a1940

    Abstract: Toshiba transistor A1940 toshiba a1940 2SA1940 2SC5197
    Contextual Info: 2SA1940 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Maximum Ratings Tc = 25°C Characteristics


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    2sa19402sc5197a1940toshiba transistor a1940+1toshiba a1940 PDF

    New Jersey Semiconductor

    Contextual Info: , Line, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1940 11 DESCRIPTION • Low Collector Saturation Voltage: VCE(sa.)= -2.0V(Min) @lc= -6A r • Good Linearity of hFE


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    2sa19402sc51-50ma-120v+1new jersey semiconductor PDF

    2SC5199

    Abstract: 2-21F1A 2SA1942
    Contextual Info: TOSHIBA 2SC5199 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. “ of


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    2sc51992sa19422-21f1a PDF

    2Sc5197

    Abstract: Collector 5v npn TRANSISTOR hfe1 Audio Output Transistor Amplifier audio NPN npn power amplifier circuit transistor Ic 1A datasheet NPN 2SA1940 2SA194 2SC51
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications


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    2sc51972sa1940collector 5v npn transistorhfe1+6audio output transistor amplifieraudio npnnpn power amplifier circuittransistor ic 1a datasheet npn2sa1942sc51 PDF

    Toshiba transistor c5198

    Abstract: C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 70w amplifier transistor Toshiba C5198 2SC5198
    Contextual Info: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


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    2sc51982sa1941toshiba transistor c5198c5198+7c5198 transistortoshiba transistor 2sc5198transistor c5198toshiba c5198 amplifiertoshiba c519870w amplifiertransistor toshiba c5198 PDF

    Toshiba transistor 2SC5198

    Abstract: C 5198 2SC5198 2SA1941 audio amplifier 70w transistor Ic 1A
    Contextual Info: 2SC5198 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 98 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


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    2sc51982sa19412-16c1atoshiba transistor 2sc5198+3c 5198audio amplifier 70wtransistor ic 1a PDF

    Toshiba transistor A1941

    Abstract: A1941 Toshiba transistor 2SA1941 toshiba a1941 A1941 TRANSISTOR 2SA1941 2sc5198 Toshiba transistor 2SC5198
    Contextual Info: 2SA1941 TO SH IBA 2 S A 1 941 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm Complementary to 2SC5198 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC


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    2sa19412sc5198toshiba transistor a1941a1941+4toshiba transistor 2sa1941toshiba a1941a1941 transistortoshiba transistor 2sc5198 PDF

    power amplifier 2sc5200 2sa1943 TRANSISTOR

    Abstract: TOSHIBA 2SA1943 transistor 2sc5200 y 2sa1943 Scans-005879 2sa1943 amplifier 2SA1943 toshiba 2sc5200 toshiba 2SC5200 2sC5200, 2SA1943 2-21F1A
    Contextual Info: 2SA1943 TO SH IBA 2 S A 1 943 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5 M AX. • • ¿ 3.3 ± 0.2 Complementary to 2SC5200 Recommended for 100 W High Fidelity Audio Frequency A rrm lifip r O n f n n f Sfacrp


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    2sa19432sc52002-21f1apower amplifier 2sc5200 2sa1943 transistor+7toshiba 2sa1943transistor 2sc5200 y 2sa1943scans-0058792sa1943 amplifier2sa1943 toshiba2sc5200 toshiba2sc5200, 2sa1943 PDF

    Contextual Info: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


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    2sa19422sc5199 PDF

    toshiba 2SC5200

    Abstract: 2sc5200
    Contextual Info: 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V min • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage


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    2sc52002sa1943toshiba 2sc5200 PDF

    2sc5200 toshiba

    Abstract: toshiba 2SC5200 toshiba 2sc5200 audio power amplifier 2SC5200
    Contextual Info: 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V min • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage


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    2sc52002sa19432-21f1a2sc5200 toshiba+2toshiba 2sc5200toshiba 2sc5200 audio power amplifier PDF