2SC4843 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR TY P E 2SC4843 Unit in mm V H F -U H F BA N D LO W NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. N F = l.ld B , |S2lel2=15.5dB f=lGHz 2 .1 ± 0.1 □ M A X IM U M RATINGS (Ta = 2 5°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR J A J A - 2SC4843 V H F ~U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm 2.1 J:0.1 Low N oise F igure, H igh G ain. N F = l .l d B , |S 2 le l2 = 1 5 .5 d B f= lG H z

2SC4843

Abstract: TRANSISTOR nf 841
Contextual Info: TOSHIBA 2SC4843 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4843 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. . N F = l.ld B , |S2 iel2 = 15.5dB f = 1GHz 1. 2 5 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

2SC4843

Contextual Info: 2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 15.5dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SC4843

Abstract: ic marking 3052
Contextual Info: TOSHIBA 2SC4843 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4843 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ldB, |S 2 l e l 2 = 15.5dB f = 1GHz 2.1 ±0.1 1.25 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC4843 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4843 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • U nit in mm 2.1 ± 0.1 Low Noise Figure, High Gain. 1.25 ± 0.1 NF = l.ld B , |S2 iel2—15.5dB f= 1GHz n M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A 2SC4843 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4843 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ld B , |S 2 i e l 2 = 15.5dB f = 1GHz 2 .1.1 0 .1 1. 25 ± 0.1 □ MAXIMUM RATINGS (Ta = 25°C)

ON Semiconductor marking 410 j50

Abstract: 2SC4843 ic marking 3052 ci 1489
Contextual Info: TO SH IBA 2SC4843 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4843 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF = l.ld B , |S2 i e l 2 = 15.5dB f = Unit in mm . 2.1±0.1 1.25±0.1 1GHz —r SYMBOL CHARACTERISTIC

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC2499

Abstract: 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor
Contextual Info: Video Output Transistors for Video Display Terminal ^ P o j a r # y ' \ ^ ^ Package Description VcEO=10V, IcsO.SA fr=3.5GHz Vceo=18V, lc=0.6A fr=2.5GHz V ceo=100V, lc=0.5A D -P A C K TO-92 MOD '— TO-126 IS (Power-Mold) NPN 2SC3613 NPN 2SC4200 Remarks T0-220(NIS)

high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Contextual Info: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

3SK275

Abstract: 2sk882 transistor TT fet C439-4 FR90
Contextual Info: Surface Mount Device 2 Ultra Super-Mini Transistors (USM) - F5/F6 Electrical Characteristics (Ta=25°C) Type No. Application VcEO (V) Ic (mA) Pc (mW) Tj (°C) Mark Comple­ mentary Similar TO-92 Remarks (Super-Mini) 2SA1586 Low-frequency amplification

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi