2SC4453 Search Results

358 IC

Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
Contextual Info: SANYO SEMICONDUCTOR CORP 2SC4453 52E D • 7 ^ 7 Q ? h 0007104 t ■ T-35-09 2018A N PN Epitaxial Planar Silicon Transistor High-Speed Switching Applications 2S12 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product

2SC4453

Contextual Info: Ordering number: EN 2 8 1 2 2SC4453 No.2812 SA\YO NPN EpiLaxial P lan a r Silicon T ra n sisto r High-Speed Switching Applications Features • F a st sw itching speed • Low collector sa tu ra tio n voltage •H igh gain-bandw idth product • Sm all collector capacity

2SC4453

Abstract: ITR06987 ITR06988 ITR06989 ITR06990 ITR06991
Contextual Info: 注文コード No. N 2 8 1 2 2SC4453 N2812 31000 2SC4453 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用 ・スイッチング速度が速い。 ・コレクタ飽和電圧が小さい。 ・利得帯域幅積が大きい。

2SC4453

Abstract: D2001 ITR06987 ITR06988 ITR06989 O278 d2598
Contextual Info: Ordering number : ENN2812A 2SC4453 NPN Epitaxial Planar Silicon Transistor 2SC4453 High-Speed Switching Applications Features • • • Fast switching speed. Low collector saturation voltage. High gain-bandwidth product. Small collector capacity. Ultrasmall-sized package permitting the 2SC4453applied sets to be made small and slim.

2SC4290A

Abstract: C 4927 2SD2356 2SC4289 2SD1407 4894 4902 2SC3997 2SC4289A 2SC4911K
Contextual Info: - 202 - S € Type No. 4t £ Manuf. -M H SANYO B TOSHIBA m NEC B AL HITACHI « ± a F U JIT S U fâ T MATSUSHITA 2SC3052 2SC 4894 të T 2SC4453 2SC343Î 2SC 4895 □—A 2SD1828 2SD1407 2SC 4896 S tL 2SC 4897 B tL 2SC3997 2SC4290A 2SC 4898 fâ T 2SC3750 2SC3310

2SC4453

Abstract: TRANSISTOR 14n
Contextual Info: 2SC4453 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 2.3f NF 1 IKF 68m NE 2 NR 1 IKR 43m NC 2 IRB 3.5m RE 580m XTB 2 XTI 3 VJE 630m TF 180p VTF 5 PTF VJC 580m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V

Contextual Info: 2SC4453-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)20

2SC4453

Abstract: 2SC4452 marking ST
Contextual Info: Ordering number:EN2812 NPN Epitaxial Planar Silicon Transistor 2SC4453 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

silicon pnp transistor

Contextual Info: O rd e rin g n u m b e r: EN 3180B NO.3180B // 2SA1764 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features - F ast switching speed •Low collector saturation voltage ■High gain-bandwidth product • Small collector capacitance

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

2SC2291

Abstract: 2SC1740 R 2SC458LG B 2SC945 2SC1345 2sc458 2SC2412K 2SC458lg 2SC4453 2SC1685
Contextual Info: - S € Type No. 2SC 1619A tt € Manuf. 2SC 1620 2SC 1621 2SC 1622 2 SC 1622A 2SC 2SC 2SC 2SC 2SC 1623 1624 1625 1626 1627 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1627A 1628 1629 ^ 1630 1631 1632 1633 1634 1635 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1636 ^ 1637 ^ 1638

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SA1047

Contextual Info: SA%VO CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the

D209

Abstract: 2SA1764 2SC4453 ITR05078 ITR05079 ITR05080 ITR05081
Contextual Info: 注文コード No. N 3 1 8 0 B 2SA1764 N3180B 20100 * 開発ニューズ No. ※ 3180 ’ 90 データブック表面実装用トランジスタ編 No. ※ 3180A とさしかえてください。 2SA1764 特長 PNP エピタキシァルプレーナ形シリコントランジスタ

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

2SC3998

Abstract: 2sc4640 4793 2SC1815 2sd637 2sc2555 2SC4804 C4463 4802 2SD1546
Contextual Info: - m « Type No. a € Manuf. H * SANYO X £ TOSHIBA B Is NEC B 3¿ HITACHI S ± Ä FUJITSU fâ T MATSUSHITA 2SC 4773 □— A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 * □— A 2SC4407 2SC4250 2SC44S3 2SC4670 2SC 4775 □— A 2SC 4776 □— A 2SC4640 2SC1815

Contextual Info: Ordering number: EN 3180B N 0 .3 I 8 O B _ 2 S A 1 7 6 4 PN P Epitaxial Planar Silicon T ransistor High-Speed Switching Applications F e a tu r e s • F a st sw itching speed • Low collector satu ratio n voltage • H igh gain-bandw idth product

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

2SC5187

Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
Contextual Info: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller

audio amplifier POWER TRANSISTORS

Abstract: 2sc3807 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SB511 2SK1840 audio power amplifier
Contextual Info: Continued from previous page Absolute maximum ratings Package Device tSfP I Applications VCBO VCEO Ve» W V) « •C ; m w m I I Electrical characteristics (Tt = 25 ”C) i Icbo m u Vcb max (jiA) V » m [¡G B O *>FE # Vce *te I te hfE I Vce (mA) (V)

2SC4453

Abstract: 2SA1764
Contextual Info: Ordering number:EN3180B PNP Epitaxial Planar Silicon Transistor 2SA1764 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitacne.

Contextual Info: SA\YO CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the

2SC4453

Contextual Info: Ordenng number : EN2812 No.2812 2 S C 44 53 NPN Epitaxial Planar Silicon Transistor SANYO i High-Speed Switching Applications F e a tu re s • Fast switching speed •Low collector saturation voltage • High gain-bandwidth product • Small collector capacity