2SC440 Search Results

2SC3775

Abstract: 2SC4405
Contextual Info: 7Ti707b QOQbûêl 3 55E D SANYO S E M I C O N D U C T O R CORP 2SC4405 - T -3 Ì -I S 2059 N P N E p it a x ia l P la n a r S il i c o n T ra n sist o r UHF Low-Noise Wide-Band Amp Applications 2758 Applications •U H F , low -noise am plifiers, wide-band am plifiers

transistor c4408

Abstract: c4408 c4408 transistor 2SA1680 2SC4408
Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

2SA1681

Abstract: 2SC4409
Contextual Info: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)

2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —

4288A

Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
Contextual Info: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

2SA1680

Abstract: 2SC4408 transistor 2SA1680
Contextual Info: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)

EN2755

Abstract: 2SC4365 2SC4402 VEBO-15V
Contextual Info: Ordering number:EN2755 NPN Epitaxial Planar Silicon Transistor 2SC4402 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions • VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. unit:mm 2059B [2SC4402] · Low-voltage operation

EN2758

Abstract: 2SC3775 2SC4405
Contextual Info: Ordering number:EN2758 NPN Epitaxial Planar Silicon Transistor 2SC4405 UHF, Low-Noise, Wide-Band Amplifier Applications Applications Package Dimensions • UHF, low-noise amplifiers, wide-band amplifiers. unit:mm 2059B Features · High cutoff frequency : fT=5.0GHz typ

2SA1681

Abstract: 2SC4409
Contextual Info: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)

C4408

Abstract: 2SC4408 2SA1680
Contextual Info: 2SC4408 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4408 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。

transistor c4408

Abstract: c4408 transistor C4408
Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

2SC4402

Abstract: 2SC4365 ITR06718 ITR06719 ITR06720 ITR06721 ITR06722 ITR06723 ITR06724 2SC4402-2
Contextual Info: 注文コード No. N 2 7 5 5 2SC4402 No. N 2 7 5 5 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4402 VHF / UHF 周波数混合 , 局部発振 , 低電圧用 用途 ・VHF / UHF, MIX / OSC, 低電圧高周波増幅用。

2SC4364

Abstract: 2SC4401 ITR06706 ITR06707 ITR06708 ITR06709 ITR06710 ITR06711 ITR06712 2SC4401-2
Contextual Info: 注文コード No. N 2 7 5 4 2SC4401 No. N 2 7 5 4 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4401 VHF / UHF 周波数混合 , 局部発振 , 低電圧用 用途 ・VHF / UHF, MIX / OSC, 低電圧高周波増幅用。

2SC4400

Abstract: 2059B ITR06699 ITR06700 ITR06701 ITR06702 ITR06703 ITR06704 ITR06705
Contextual Info: 注文コード No. N 3 1 9 5 2SC4400 No. N 3 1 9 5 30300 2SC4400 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 ・電力利得が大きい。 ・しゃ断周波数が高い。 ・Cob, Cre が小さい。

Contextual Info: 2SC4402 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2SC4406-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2SC4401-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

k 2059 TRANSISTOR

Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR
Contextual Info: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency

2SC4365

Abstract: 2SC4402 SK200
Contextual Info: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V

2SA1681

Abstract: 2SC4409
Contextual Info: 2SC4409 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4409 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •

Contextual Info: Ordering number:EN2754 NPN Epitaxial Planar Silicon Transistor 2SC4401 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions • VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. unit:mm 2059B [2SC4401] · Low-voltage operation

transistor smd marking KA

Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
Contextual Info: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681

Contextual Info: SANYO SEMICONDUCTOR 25E CORP ? clei707b OOObfibS D 2SC4401 S T - 3 h l7 # NPN Epitaxial Planar Silicon Transistor 2059 2754 V/U M IX, OSC, Low-Voltage Amp Applications A pplications • VHF/UHF MIX/OSC, Iow-voltage high-frequency amplifiers Features • Low-voltage operation