2SC337 Search Results

Contextual Info: h v X ^ /T ra n s is to rs ROHM CO LTD MOE D • 2SC3377 ’T a S f l n i 'D D D S 7 b ej’ T B R H M JU7°I s - i - B NPN y U = l > h - 7 > V ^ ^ /Medium Power Amp. 1 ^ -2 7 -¡3 Epitaxial Planar NPN Silicon Transistor J iH / D im e n sio n s U n it: mm

2SC337

Abstract: 2SC3376
Contextual Info: TOSHIBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. • 15.9MAX. S¿3.2±0.2 Excellent Switching Times l£ = 0.8A

2SC3431

Abstract: 2SC3402 2SC3381 2SC3379 2SC3382 2SC3383 2SC3390 2SC3391 2SC3392 2SC3393
Contextual Info: - 156 - MX'Ëtë Ta=25°C, *EPÍáTc=25cC m % tt VcBO « (V) 2SC3379 H S 2SC3380 H i HF PA VcEO (V) IC(DC) (A) 20 Pc m Pc* (W) ICBO (max) (//A) (W) 1.5 10 m ft fé t t (Ta=25'C) hF E Vc b (V) (min) (max) , > , , > (max) (V) Ic / I e (A) VcE (V) [*EPfátypíÍ]

2sc3376

Abstract: 2SC337
Contextual Info: TO SH IBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. 3.2 ± 0 .2 15.9MAX • Excellent Switching Times Iç; = 0.8A

Contextual Info: TOSHIBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • Excellent Switching Times l0 = O.8A : tr =1.0^8 (Max.), tf=1.0/^s (Max.)

2SC337

Abstract: 2sc3376
Contextual Info: TOSHIBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Ex cellen t Sw itch ing Tim es Ic = 0.8A

15-9MAX

Contextual Info: 2SC3376 SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U n it in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. 15.9MAX . • Excellent Sw itching Tim es Iç = 0.8A : tr = 1.0//s (Max.), tf = 1 .0 ^ s (Max.)

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB

2SC3374

Abstract: 2SC1856 2SC337 sC3374 u marking amplifier
Contextual Info: 2SC3374 SILIC O N NPN VHF T V *- =l— ± VHF AM PLIFIER VH F T V TUNER RF AM PLIFIER iS ü 0.1611 0 - 0.1 5 1 . x i 7 ^ : E m itte r 2 . ^ — y*. ^ B ase 3 . 3 1 ' ? ' ^ ; C o lle c to r D im en sio n s in mm 0.8 (M PAK) A B SO LU T E M AXIM U M R ATIN G S (7 a = 25°C)

2SC3377

Abstract: 2SC337
Contextual Info: 2SC3377 h -7 > y X £ / T ransistors S C 3 3 7 7 2 b-7 > v * $ Epitaxial Planar NPN Silicon Transistor /Medium Power Amp. • W f ^ ä a / D i m e n s i o n s Unit : mm 1) V c E ( s a t ) * 'i 6 '''o VcE(sat)= 0,15V (Typ.) (lc /lB = 5 0 0 m A /5 0 m A )

2SC3376

Contextual Info: TO SH IBA 2SC3376 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3376 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. 3.2 ±0.2 15.9MAX • Excellent Switching Times Iç; = 0.8A

Contextual Info: 2SC3376 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sc3376

Contextual Info: 2SC3376 SILICON NPN TRIPLE DIFFUSED T Y P E INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. 1&9MAX HIGH SPEED DC-DC CONVERTER APPLICATION. it FEATURES : . Excellent Switching Times Ic=0.8A : tr=l .0,us(Max. ), tf=l.0/iS(Max.)

2sc337

Contextual Info: 2SC3377 S ~p > V Z $ /Transistors 2SC3377 '7;1/70u~^npn 4, ^ i H llliffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ J f iv f j iH / D im e n s io n s U n it : mm 1W • 1) V C 6 (Sat) = 1 5 0 m V T y p . (at 5 0 0 m A ) t • F e atu re

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC

2sc3855

Abstract: 2SC3858 2SC3898 2sa1494 2SC3859 2SA1491 2SA1492 2SA1493 2SA1495 2SC3856
Contextual Info: - m fT Vc e V (MHz) ton tf (Ms) m tstg (m s ) (m s ) ft Cob (max) (pF) tt ( 1 3 = 2 5 * 0 Cre (max) (pF) il [*EPfätypfiI3 Œ g □ y-fv 14 ;lJj Ê ft m # mm mm m % M £ -12 -0.5 0.3* 0. 2* 0.9* 2SC3855 (MT100) BCE 2SA1491 -12 -0.5 0.6* 0.2* 0.9* 2SC3856

1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD

2SC 1207

Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906