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2SC3076 Datasheets (32)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC3076	Kexin	Silicon NPN Epitaxial	Original	PDF	41.28KB	2
2SC3076	Toshiba	Silicon NPN Transistor	Original	PDF	125.81KB	5
2SC3076	Toshiba	NPN Transistor	Original	PDF	192.8KB	5
2SC3076	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	44.21KB	1
2SC3076	Unknown		Scan	PDF	183.9KB	4
2SC3076	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	105.19KB	2
2SC3076	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.19KB	1
2SC3076	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	116.12KB	1
2SC3076	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	44.85KB	1
2SC3076	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	80.21KB	1
2SC3076	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	36.37KB	1
2SC3076	Unknown	Cross Reference Datasheet	Scan	PDF	36.72KB	1
2SC3076	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	49.05KB	1
2SC3076	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	33.9KB	1

2SC3076	Toshiba	SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF	217.52KB	5
2SC3076	Toshiba	Silicon NPN transistor for power amplifier and power switching applications	Scan	PDF	217.52KB	5
2SC3076	Toshiba	Toshiba Shortform Catalog	Scan	PDF	90.59KB	1
2SC3076(2-7B1A)	Toshiba	2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	161.9KB	5
2SC3076(2-7B2A)	Toshiba	2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	161.9KB	5
2SC3076(2-7J1A)	Toshiba	2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	161.9KB	5

2SC3076 Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SC3076-Y(T6L1,NV) Trans GP BJT NPN 50V 2A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC3076-Y(T6L1,NV)		657		12	1 - 10 - 100 $0.29 1000 $0.25 10000 $0.25	Buy Now
Toshiba America Electronic Components 2SC3076Y 2000 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	2SC3076Y		15,220			1 $1.95 10 $1.95 100 $1.95 1000 $0.90 10000 $0.82	Buy Now
	2SC3076Y		560			1 $3.12 10 $3.12 100 $3.12 1000 $1.29 10000 $1.29	Buy Now
Toshiba America Electronic Components 2SC3076-Y,L1XHV(0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC3076-Y,L1XHV(0		716			1 $1.93 10 $1.93 100 $0.96 1000 $0.77 10000 $0.77	Buy Now

2SC3076 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C3076 Abstract: 2SC3076 Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15	Original	2SC3076 O-252 C3076 C3076 2SC3076	PDF
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241	PDF
Contextual Info: 2SC3076 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240	Original	2SC3076 Freq100M StyleTO-251	PDF
transistor c3076 Abstract: C3076 2SC3076 2SA1241 Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241 transistor c3076 C3076 2SC3076 2SA1241	PDF
2SA1241 Abstract: 2SC3076 30J40 Contextual Info: TO SH IBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)	OCR Scan	2SC3076 2SA1241 2SA1241 2SC3076 30J40	PDF
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SC3076 2SA1241	PDF
2SC3076 Abstract: C3076 2SA1241 Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SC3076 2SA1241 2SC3076 C3076 2SA1241	PDF
Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。	Original	2SC3076 2SA1241	PDF
2sc3076 Abstract: V7040 Contextual Info: 2SC3076 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. F EATURES : . L o w Collector Saturation Voltage : v C E s a t = 0 - 5V (Max.) (Ic=lA) . Excellent Switching Time : ts tg= l-0,us (Typ.) . C omplementary to 2SA1241	OCR Scan	2SC3076 2SA1241 2sc3076 V7040	PDF
2SA1241 Abstract: 2SC3076 30J40 Contextual Info: TOSHIBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)	OCR Scan	2SC3076 2SA1241 2SA1241 2SC3076 30J40	PDF
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SC3076 2SA1241	PDF
C3076 Abstract: 2SC3076 2SA1241 Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。	Original	2SC3076 2SA1241 C3076 2SC3076 2SA1241	PDF
2SA1241 Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )	OCR Scan	2SA1241) 2SA1241 2SC3076 2SA1241 V10Urns a1241 A 1241 transistor 2sa1241 1241 transistor	PDF
2SC3181 Abstract: 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114 Contextual Info: 236 - a Si £ Type No. « » « fe' T T fci T 2SD 12 7 5A 2SD 1 27 6 2SD 12 7 6A 2SD 1 27 7 2SD 12 7 7A 2SD 1278 2SD 1 28 0 2SD 1 2 81 2SD 1 2 82 2SD 1 2 83 2SD 1284 2SD 128 5 > 2S D 1286 TOSHIBA 1 NEC 31 HITACHI § t FUJITSU I ta t MATSUSHITA = m MITSUBISHI	OCR Scan	2SD1765 2SD1589 2SD1933 2SD1590 2SD1604 2SD2025 2SD822 2SD1619 2SC3181 2SD1526 1286-Z 2SD2239 2SC2060 2Sd1448 2SD400 2SD798 2SD822 2SD1114	PDF

transistor a1241 Abstract: a1241 transistor 2sa1241 2SA1241 2SC3076 IC 1029 Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)	OCR Scan	2SA1241 2SC3076 2SA124transportation transistor a1241 a1241 transistor 2sa1241 2SA1241 IC 1029	PDF
transistor a1241 Abstract: a1241 a1241 semiconductor 2SA1241 2SC3076 Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)	OCR Scan	2SA1241 2SC3076 transistor a1241 a1241 a1241 semiconductor 2SA1241	PDF
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent	PDF
2SA1241 Abstract: 2SC3076 Contextual Info: 2SA1241 TOSHIBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VGE(sat) = -0 .5 V (Max.) (IC = -1 A ) Excellent Switching Time : tgtg = 1.0 /is (Typ.)	OCR Scan	2SA1241 2SC3076 961001EAA1 2SA1241	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent	PDF

2SC3076 Search Results

2SC3076 Datasheets (32)

2SC3076 Price and Stock

Toshiba America Electronic Components 2SC3076-Y(T6L1,NV)

Toshiba America Electronic Components 2SC3076Y

Toshiba America Electronic Components 2SC3076-Y,L1XHV(0

2SC3076 Datasheets Context Search

C3076

transistor c3076

2SA1241

2SC3076

2sc3076

2SA1241

C3076

2SA1241

2SC3181

transistor a1241

transistor a1241

alternator diode 1776 B

2SA1241

GT30F131

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"