2SC186 Search Results

2SC1863

Contextual Info: SavantIC Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25 APPLICATIONS ·Designed for general-purpose amplifier and switching applications

2SA0900

Abstract: 2SA900 2SC1868
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

2SC1865

Contextual Info: 2SC1865 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1868

Contextual Info: SavantIC Semiconductor Product Specification 2SC1868 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·High voltage ,high speed APPLICATIONS ·For switching regulator application PINNING see Fig.2 PIN DESCRIPTION

2SA0900

Abstract: 2SA900 2SC1868
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat)

BU1040

Abstract: ir431 IR430 2SC1865 IR423 BU104 2sc1865 nec ir411 RCA1B09 RCA410
Contextual Info: POWER SILICON NPN Item Number Part Number I C • 5 10 20 2S0917 SOT31303 2N6510 BU406 2SC3591 RCA1B04 2SC3175 2SC3176 BUY18S lR4TO" 25 30 35 · 40 45 50 55 60 65 70 75 · 80 RCA410 SML31305 SOT31305 2N6511 B0550B 2SC1864 2SC1867 RCA1B05 BUX62 SK3217 RCA1B09

2SA0900

Abstract: 2SA900 2SC1868
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 11.0±0.5 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

2SC1868

Contextual Info: Inchange Semiconductor Product Specification 2SC1868 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·High voltage ,high speed APPLICATIONS ·For switching regulator application PINNING see Fig.2 PIN DESCRIPTION

2SC1863

Abstract: 2SC186
Contextual Info: Inchange Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25℃ APPLICATIONS ·Designed for general-purpose amplifier and switching applications

Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

DIODE 6AA

Abstract: KT602BM sm 6aa KT602B 2N5073 2S0114 2SC1860 2SC499 BC117 kt503e
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 . 15 20 UPT215 KT503E 2N1717 KT630G SE7015 HSE178 KT602BM BC449 BC449 BC449 2N5175 2N3388 2So666A BC449A BC449A BC449A 2So667A 2N2941 2SC31 0 BCX29 ~g~~~ 25 30 35 40 45 50 55 60 2SC1860 2SC499 BSS38 2N5830 KT215B1

Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow

Contextual Info: 2SC1869 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1864

Contextual Info: 2SC1864 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,