2SD218 Search Results

2SB1440

Abstract: 2SD2185 DSA003720 DSA00372056
Contextual Info: Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm 45° * 0.5±0.08 1.5±0.1 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO

Contextual Info: Power Transistors 2SD2180 2SD2180 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Output Amplifier ■ Features U n i t !. m m • Low co llector-em itter saturation voltage VcEuao • High collector cu rren t (It) ■Absolute Maximum Ratings (Ta=25°C)

ST 7502

Abstract: 2SD2180 2SD218
Contextual Info: Panasonic< 2SD2180 V ij n > N P N x b • ft + * • n v - ^ . i - • > ^ fâ fD f l: r ± V c E s a t * î i S ' ‘'o • i : ¡ ! i t i c p * i' ± & ■ l 'o (Ta = 25°C) Item Symbol n U ? 2 •^ - X f E ^ Í 7 ^ fŒ X ÜŒ Value Unit VcBO 50 V VcEO

Contextual Info: Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features ■ Absolute Maximum Ratings 14.5±0.5 ● (1.0) ● *1 0.65 max. High collector to emitter voltage VCEO.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2184 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • High collector-emitter voltage (Base open) VCEO • Low collector-emitter saturation voltage VCE(sat)

2SB1440G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD2185G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)

2SB1440

Abstract: 2SD2185
Contextual Info: Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Unit: mm * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

2SB1438

Abstract: 2SD2184
Contextual Info: Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● 1.45 0.8 0.2 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).

2SB1440

Abstract: 2SD2185
Contextual Info: Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm 4.5±0.1 1.6±0.2 Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SB1438

Abstract: 2SD2184 PF-8500
Contextual Info: Transistor 2SD2184 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB1438 6.9±0.1 4.0 2.5±0.1 0.8 • Features (0.5) (1.0) (0.2) 4.5±0.1 0.7 (1.0) 0.65 max. 14.5±0.5 • High collector to emitter voltage VCEO

2SB1438

Abstract: 2SD2182
Contextual Info: Panasonic 2SD2182 -> ' 3 > N P N I \ ¿ * -> 7 )\>- ? \s - i-J& 2SB1438 •m fi • 3 U ? ? • X Î -, ? MfE VCEO • 3 1/^ÿ'X 5-; • 7 - > ' 7 ) V f - t f > ^ T ' W f  f ê ñl#é„ VCE sat)Ä!l V ' o ■ IÈ * Î* * J È tt-(T a = 2 5 t) Item 3 1 /^

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3 2 0.5±0.08 1.5±0.1

Contextual Info: Transistors 2SB1440 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD2185 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Mini Power type package, allowing downsizing of the equipment

2SB1440G

Abstract: 2SD2185G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD2185G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2184 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 2.5±0.1 (0.8) • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD2185 4.5±0.1 1.6±0.2 1 3 2 0.5±0.08 2.5±0.1 0.4±0.04 d p lan inc ea

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 1.5±0.1 3 2 0.5±0.08 0.4±0.04 di p Pl lan nclu ea e se

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD2185G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SB1440G • Package • Low collector-emitter saturation voltage VCE(sat)

Silicon NPN Epitaxial Planar Type

Abstract: 2SD2185
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2185 Features Low collector-emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Power Transistors SIT

Abstract: i-003 2SB1439 2SD2183
Contextual Info: Power Transistors 2S D 21 83 2SD2183 Silicon NPN Epitaxial Planar Type • P ackage Dim ensions AF Output Amplifier C om plem entary Pair with 2 S B 14 39 ■ Features • High collector-em itter voltage V Ce o • Low collector-em itter saturation voltage (VcEisati)

2SD2180

Contextual Info: Power Transistors 2SD2180 2SD2180 Silicon NPN Epitaxial Planar Type Package Dimensions AF Output Amplifier • Features • L ow c o lle c to r-e m itte r sa tu ratio n v o lta g e VcEtsao • High c o lle c to r c u rre n t (Ic) Absolute Maximum Ratings (Ta=25°C)

Contextual Info: 2SD2183 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A).1u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1

2SB1440G

Abstract: 2SD2185G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440G • Package • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment