2SB941 Q Search Results

2SB941

Abstract: 2SB941 datasheet 2SB941A 2SD1266 2SD1266A 1405Q
Contextual Info: Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB941 base voltage 2SB941A Collector to 2SB941 Ratings

2SB941

Abstract: 2SB941A 2SD1266 2SD1266A
Contextual Info: Powér Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A Unit ! mm 4.4max. 2.9max. • Features • H igh DC c u r re n t gain Iife and good lin earity

2SB941

Abstract: 2SB941A 2SD1266 2SD1266A 2SB941 Q
Contextual Info: Powër Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A U nit ! mm 4.4max. 5.7 max. • Features • H igh DC c u r re n t gain Ii f e and good lin earity

2SB941

Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
Contextual Info: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION

2SB941

Abstract: 2sb941a
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complementary to type 2SD1266/1266A APPLICATIONS ·For low-frequency power amplification PINNING

2SB941

Abstract: 2SB941 datasheet 1266a 2SB941A 2SB941 P
Contextual Info: Inchange Semiconductor Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification

2SB941

Abstract: 2SD1266 2sB941 transistor 2SB941 Q
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB941 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 APPLICATIONS ·Designed for low-frequency power amplifications.

2SD1266

Abstract: 2SB941 2SB941A 2SD1266A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A

2SD1266

Abstract: 2SD1266A 30ma 40v npn 2SB941 datasheet
Contextual Info: Inchange Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A

2SB941 datasheet

Abstract: 2SB0941 2SB0941A 2SB941 2SB941A 2SD1266 2SD1266A
Contextual Info: Power Transistors 2SB0941, 2SB0941A 2SB941, 2SB941A Silicon PNP epitaxial planar type Unit: mm 4.2±0.2 5.5±0.2 2.7±0.2 Collector to base voltage 2SB0941 Collector to emitter voltage 2SB0941 Rating Unit VCBO −60 V −60 VCEO V −80 2SB0941A VEBO −5

2SD1266

Abstract: 2SD1266A 2SB941 P
Contextual Info: SavantIC Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A

transistor 12v 1A NPN

Abstract: 2SB941 2SD1266
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941

2SD1266

Abstract: 2SD1266A 2SB0941 2SB941 2SB941A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 2SB941 and 2SB941A (2SB941A) Parameter Symbol Rating Unit VCBO 60 V Collector to base voltage 2SD1266 Collector to emitter voltage

Contextual Info: Power Transistors 2SB0941, 2SB0941A 2SB941, 2SB941A Silicon PNP epitaxial planar type Unit: mm 5.5±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Collector to base voltage 2SB0941 Collector to emitter voltage 2SB0941 2SB0941A

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

DARLINGTON TRANSISTOR ARRAYS pu1501

Abstract: 2SD1273 PU3146 PU4128 apu4148
Contextual Info: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name Equivalent Circuit Packaqe (No.) Equivalent Circuit Structure Application General Exam ple(N PN ) PU3000 Series PUA3000 Series PU4000 Series 8 Pin •SIL Packaqe (D72) (D73)

2sb1355

Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Contextual Info: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^

2SB943

Abstract: 2SD1268
Contextual Info: 2SB943 Power Transistors 2SB943 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1268 •Features • • • • 2.9max. Low collector-emitter saturation voltage VcEisao Good linearity of DC current gain (I if e )

2SB943

Abstract: 2SD1268 2SB941 P p 181 V
Contextual Info: Power Transistors 2SB943 2SB943 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD 1268 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcE<sao • G ood lin e a rity of D C c u r r e n t gain (Iife )

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157