2SB941 P Search Results

2SB941

Abstract: 2SB941 datasheet 2SB941A 2SD1266 2SD1266A 1405Q
Contextual Info: Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB941 base voltage 2SB941A Collector to 2SB941 Ratings

2SB941

Abstract: 2SB941A 2SD1266 2SD1266A
Contextual Info: Powér Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A Unit ! mm 4.4max. 2.9max. • Features • H igh DC c u r re n t gain Iife and good lin earity

2SB941

Abstract: 2SB941A 2SD1266 2SD1266A 2SB941 Q
Contextual Info: Powër Transistors 2SB941, 2SB941A 2SB941, 2SB941A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD 1266, 2SD 1266A U nit ! mm 4.4max. 5.7 max. • Features • H igh DC c u r re n t gain Ii f e and good lin earity

2SB941

Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
Contextual Info: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION

2SB941

Abstract: 2sb941a
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complementary to type 2SD1266/1266A APPLICATIONS ·For low-frequency power amplification PINNING

2SB941

Abstract: 2SB941 datasheet 1266a 2SB941A 2SB941 P
Contextual Info: Inchange Semiconductor Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification

2SB941

Abstract: 2SD1266 2sB941 transistor 2SB941 Q
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB941 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 APPLICATIONS ·Designed for low-frequency power amplifications.

2SD1266

Abstract: 2SB941 2SB941A 2SD1266A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A

2SD1266

Abstract: 2SD1266A 30ma 40v npn 2SB941 datasheet
Contextual Info: Inchange Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A

2SD1266

Abstract: 2SD1266A 2SB941 P
Contextual Info: SavantIC Semiconductor Product Specification 2SD1266 2SD1266A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A

transistor 12v 1A NPN

Abstract: 2SB941 2SD1266
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941

2SD1266

Abstract: 2SD1266A 2SB0941 2SB941 2SB941A
Contextual Info: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 2SB941 and 2SB941A (2SB941A) Parameter Symbol Rating Unit VCBO 60 V Collector to base voltage 2SD1266 Collector to emitter voltage

Contextual Info: Power Transistors 2SB0941, 2SB0941A 2SB941, 2SB941A Silicon PNP epitaxial planar type Unit: mm 5.5±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Collector to base voltage 2SB0941 Collector to emitter voltage 2SB0941 2SB0941A

2SD1266 R

Abstract: 2SD1266 2SB941 2SB941A 2SD12 2SD126 2SD1266A VCE-80
Contextual Info: Power Transistors 2SD1266, 2 SDÌ 2Ó6A S D 1266, 2S D 1266A Silicon NPN Triple-Diffused Planar Type 2 Package Dimensions Power Amplifier Complementary Pair with 2SB941, 2SB941A • Features Unit ! mm 4.4max. 10.2max. 5.7max. 2.9max »I • High DC current gain I i f e and good linearity

UMS1

Abstract: 2sb941 nec 772 1866 2sa158 2sa1727 2SB1308 2SA1400-Z 2SA1588 2SA1745
Contextual Info: - m € T y p e No. a € Manuf. 2SA 1865 = z m SAN YO B m NEC ÍL H IT ACHI a i 2S A 1 7 4 5 2SA 1868 fé T 2S A 1 7 7 2 s 2 2SB1274 2SA 1873 K 2 2SA 1875 H * . 2SA 1878 2SA 1879 ffSTE 2SA 1881 ^ Z * 2 SA 1588 * ± a FUJITSU fò T MATSUSHITA — A ROHM 2 SB 1219

PU1501

Abstract: PU4471 PU4135 PU7456 PU4000 PU4118 PU4128 apu4148 PU4444 PU3134
Contextual Info: Transistore Selection Guide by Applications and Functions IPower Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) Equivalent Circuit I I I ^''''\_Structure A p p lic a tio n ^ ^ General Example (N P N ) TT 2 s 5 Low VcE(sat) PUA3000

Pu4128

Abstract: PU4471 PU42C26
Contextual Info: Transistore Selection Guide by Applications and Functions I Power Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) T 3 5 ^ ^ \S t r u c t u r e « PU4000 Series 8 Pin 'SIP Package (D72) (D73) Equivalent Circuit 7 PUA3000 Series

2SB962

Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Contextual Info: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»

2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^

2SA985 NEC

Abstract: 2s8834 2SB56 2SB596 2SA985 toshiba 2sb555 2SB834 2SB508 2SB537 2SA836
Contextual Info: s € tt T y p e No. 2SB 153 2SB 154 2SB 155 2SB 176 " 2SB 302 2SB 370 2SB 370A 2 Sß 434 , □ SS a X 3: SAN YO ^ M TOSHIBA s t NE C il H IT ACHI ±L 2SB 561 ±L 31 2 SB 561 T 4 ii Ä S 2SB 435 ^ 2SB 444 0 a a iz 2SB 492 - = # 2SB 496 iL 2SB 502 Ä ä 2SB 443

2SB943

Abstract: 2SD1268
Contextual Info: 2SB943 Power Transistors 2SB943 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1268 •Features • • • • 2.9max. Low collector-emitter saturation voltage VcEisao Good linearity of DC current gain (I if e )

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D52 * , D53) U Type (D41) MT2LType MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SA1949

Abstract: 2SC5221 2SA1950 2C156 2SB1543 2SB1545 2SC2594 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) P a c k a g e (No.) Application Functions U Type (D41) TO-126 (D52 * , D53) M T 2LT ype MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a)

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F