2SB92 Search Results

2SB928A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB928A TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High collector to emitter VCEO Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1

Contextual Info: Product specification 2SB929 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .

2SB925

Abstract: 2SB925A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB925 2SB925A DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching applications PINNING PIN DESCRIPTION

2SD1239

Abstract: 2SB923 2SD123
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB923 DESCRIPTION •High Collector Current: IC= -20A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -10A ·Complement to Type 2SD1239 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.

2sd1240

Abstract: 2SB924
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB924 DESCRIPTION •High Collector Current: IC= -25A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -12A ·Complement to Type 2SD1240 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.

2SB921

Abstract: 2SD1237
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB921 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -4A ·Complement to Type 2SD1237 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.

2SB0928

Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SB0928, 2SB0928A 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO V –180 Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SB920L

Abstract: 2SD123 circuit 17961
Contextual Info: Ordering number:1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 emitter voltage 2SB929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature Tj Storage temperature

2SB920

Abstract: 2SD1236
Contextual Info: Ordering number : ENN1027A 2SB920 / 2SD1236 PNP / NPN Epitaxial Planar Silicon Transistors 2SB920 / 2SD1236 Large Current Switching Applications Applications • Package Dimensions Large current switching of relay drivers, high-speed inverters, converters.

2SD1250

Abstract: 2SD1250A 2SB0928 2SB0928A 2SB928 2SB928A IC1102
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB0929, 2SB0929A 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 –60 emitter voltage 2SB0929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature

Contextual Info: Power Transistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1252, 2SD1252A Unit : mm 8.7 • Features • High DC current gain hre and good linearity • Low collector-emitter saturation voltage (V c el . u)

Contextual Info: Product specification 2SB928A TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High collector to emitter VCEO Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SB922 2SD1238

Contextual Info: Ordering number : ENN1429A 2SB922 / 2SD1238 PNP / NPN Epitaxial Planar Silicon Transistors 2SB922 / 2SD1238 Large Current Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed inverters, converters. unit : mm

2SB921

Abstract: 45Qn 50Qn
Contextual Info: O rdering n u m b e r:, ÉN1797B 2SB921L/2SD1237L N 0 .1 7 9 7 B PNP/NPN Epitaxial Planar Silicon Transistors SANYO i 80V/7A Switching Applications A P P L IC A T IO N S • Suitable fo r relay drivers, high-speed inverters, converters, and other general large-current switching applications

PE 7058

Abstract: circuit 17961
Contextual Info: Ordering num ber: EN 1796B 2SB920L/2SD1236L N0.1796B PNP/NPN Epitaxial P lan ar Silicon Transistors SAMYO i 80V/5A Switching Applications A pp licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SB928

Abstract: 2SD1250 IC vertical panasonic 2SB928A 2SD1250A A628A
Contextual Info: 2SD1250, 2SD1250A Power Transistors 2SD1250, 2SD1250A Silicon NPN Triple-Diffused Planar Type • Package Dim ensions Power A m plifier TV V ertical D eflection O utput C om plem entary Pair with 2SB928, 2SB928A ■ Features • H ig h D C c u r r e n t g a in h t t a n d g o o d lin e a rity

Contextual Info: Power T ransistors 2SB928, 2SB928A 2SB928, 2SB928A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SD1250, 2SD1250A •Features U nit i • High çollector-emitter voltage V ceo)

2SB920L

Abstract: 2SD1236L
Contextual Info: Inchange Semiconductor Product Specification 2SD1236L Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB920L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Relay drivers,high speed inverters,

2SB920

Abstract: 2SD1236
Contextual Info: 2SB920/2SD1236 PNP/NPN Epitaxial Planar-Type Sili con Transister For General Purpose Large-Current Switching satures: * Very Low Collector Saturation Voltage:VCE sat =-0.5V(PNP),0.4V(NPN)max. * Wide Safety Operation Area . ( ) is for 2SB920, the description other than which are common to 2SB920,2SD1236.