2SB78 Search Results

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) (1.0) (1.5) Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V VEBO

Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2SB789A

Abstract: 2SB789 2SD968 2SD968A marking symbol ER transistor IC 4020
Contextual Info: Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm Parameter Symbol Collector to 2SB789 base voltage 2SB789A Collector to 2SB789 Ratings –100 VCBO –120 –100

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit

Contextual Info: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors Power Transistor —40V, —2A 2SB 1183 / 2SB1239 / 2SB786F ^Absolute maximum ratings (Ta=25^C) 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kO resistor between base and emitter.

2SA114

Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF

Contextual Info: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planar type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit: mm For low-frequency driver amplification 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 1 0.4±0.08 3 2

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A IC 2003
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) 1.6±0.2 1 3 2 0.5±0.08 0.4±0.08

2SD958

Abstract: 2SB788
Contextual Info: Transistor 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB788 Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm Parameter Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

2SD947F

Abstract: 2SB1183 2SB1239 2SB786F 2SD1759 2SD1861 2SB786
Contextual Info: Transistors 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F 96-126-B23 (94S-321-D23) 283

2SB788

Abstract: 2SD958
Contextual Info: Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD958 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) 4.1±0.2 2.0±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol

2SB0788

Abstract: 2SB788 2SD0958 2SD958
Contextual Info: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 • Features • High collector-emitter voltage (Base open) VCEO

Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter

2SB789

Abstract: 2SB789A 2SD968 2SD968A
Contextual Info: Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A Unit: mm 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter Collector to 2SD968 base voltage 2SD968A Collector to

D947F

Abstract: 2SD947F transistor d 947f TRANSISTOR 2sd947f
Contextual Info: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors I Power Transistor —40V, —2A 2 S B 1 183 / 2S B 12 39 / 2S B 78 6F •F e a tu re s 1 ) Darlington connection for high D C current gain. 2 } Built-in 4 k Q resistor between b a se a n d emitter.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit: mm For low-frequency driver amplification 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 M Di ain sc te on na tin nc

2SB788

Abstract: 2SB0788 2SD0958 2SD958
Contextual Info: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current