2SB161 Search Results

Contextual Info: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm 45° +0.1 1.0–0.2 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 1.5±0.1 45° * 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo

2SB1617

Contextual Info: T O S H IB A 2SB1617 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 617 Unit in mm MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS PO W ER SWITCHING APPLICATIONS 8.0 ± 0.2 PO W ER AM PLIFIER APPLICATION • • High DC Current Gain : hpg —2000 (Min.)

2SD2474

Abstract: 2SB1612
Contextual Info: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SB1617

Abstract: B1617
Contextual Info: 2SB1617 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1617 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

5027A

Contextual Info: TOSHIBA 2SB1617 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 9 <; R 1 fi 1 7 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS 8.0 ± 0.2 PO W ER AM PLIFIER APPLICATION tm • High DC Current Gain • Low Saturation Voltage

Contextual Info: Transistors 2SB1614 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation

Contextual Info: Panasonic Transistor 2SB1612 Silicon PNP epitaxial planer type For low -frequency am plification U nit: mm C om ple m e ntary to 2S D 2474 • Features • Low collector to emitter saturation voltage V c E s a t • Mini Power type package, allowing downsizing of the equipment

2F P marking

Abstract: 2SD2474 at maga 2SB1612
Contextual Info: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SB1612

Abstract: 2SD2474
Contextual Info: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SB1617

Contextual Info: TOSHIBA 2SB1617 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 SB1617 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATION • • High DC Current Gain : hpE —2000 (Min.) Low Saturation Voltage : V ç;e (sat)“ —1-5V (Max.)

Contextual Info: 2SB1617 SILICON PNP EPITAXIAL TYPE PCT PROCESS (DARLINGTON POWER) U nit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. • • High DC Current Gain : hp'E = 2000 (M in.) ( V q e = —2V, I q = —1A)

2SB1617

Abstract: B1617
Contextual Info: 2SB1617 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1617 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = −2 V, IC = −1 A)

2SD2478

Abstract: D426 2SB1616 b426 2SB1616 equivalent SPEC-B426
Contextual Info: Transistors 2SB1616 2SD2478 SPEC-B426 (94L-1129-D426) 301

2SB1617

Abstract: B1617
Contextual Info: 2SB1617 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1617 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)

2SB1617

Contextual Info: 2SB1617 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 617 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATION • High DC Current Gain : hpE —2000 (Min.) • T-jOw S a tu r a tio n V oltaire

Contextual Info: TO SHIBA 2SB1617 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 617 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS 8.0 ± 0.2 PO W ER AM PLIFIER APPLICATION • High DC Current Gain : hjrjr; = 2000 (Min.)

2SB1614

Contextual Info: Transistors 2SB1614 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 Symbol Rating 3.0±0.15 −20 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −5 V Peak collector current ICP −2.4

2SB1614

Contextual Info: Transistors 2SB1614 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 Symbol Rating 3.0±0.15 −20 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −5 V Peak collector current ICP −2.4

Contextual Info: 2SB1617 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1617 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

c4574

Contextual Info: Transistors Medium Power Transistor Motor or Relay drive (—80V, —4 A) 2SB1616 iA bsolute maximum ratings (T a = 2 5 ”C ) •F e a tu re s Sym bol L im its 1 ) Darlington connection for a high hre. 2 ) Built-in resistor between base and em itter. 3 ) Built-in dam per doide.

2SD2449

Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129

Contextual Info: 2SB1617 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1617 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)