2SB1320 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE

2SB1320A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max.

2SB1320A

Abstract: 2SD1991A 2SB1320
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features (0.85) 0.65 max. 14.5±0.5 d p lan inc

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SD1991A

Abstract: 2SB1320A
Contextual Info: Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: 2SB1320 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SB1320A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max.

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SD1991

Abstract: 2SB1320
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1991 • Package  Allowing supply with the radial taping  Code MT-1-A1 M Di ain

2SB1320A

Abstract: 2SD1991A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es si tf

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. • High forward current transfer ratio hFE

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max. 14.5±0.5 (0.85) • High forward current transfer ratio hFE

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistor 2SB1320A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1991A Unit: mm 0.15 ● High foward current transfer ratio hFE. Allowing supply with the radial taping. 1.0 ● 0.8 • Features 1.05 2.5±0.1 1.45 ±0.05

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1991 • Package M Di ain sc te on na tin nc ue e/ d  Features  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm • Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB536A

Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Contextual Info: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A