2SA175 Search Results

2SA1757

Abstract: PNP 100V 2A
Contextual Info: INCHANGE Semiconductor Product Specification 2SA1757 Silicon PNP Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation

2SA1757

Contextual Info: SavantIC Semiconductor Product Specification 2SA1757 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·For switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector

2SA1758

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1758 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -2V, IC= -2A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -6A, IB= -0.3A)

2SA1163

Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
Contextual Info: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry

transistor Cd 18 p

Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
Contextual Info: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V

2SA1758

Abstract: PNP 100V 2A
Contextual Info: Inchange Semiconductor Product Specification 2SA1758 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION

2SC5103

Abstract: 2SA1757 2SA1906 2SA1952 2SC4596
Contextual Info: Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 96-603-A314 (96-199-C314) 281

2SA1755

Contextual Info: HITACHI 2SA1755 -Silicon PNP Epitaxial Application TO-92MOD. High speed switching Table 1 Ordering Information Type No. hPE1 2SA1755B 50 to 100 2SA1755C 80 to 160 3 2 1 Table 2 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: Ordering number:ENN3197 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1753/2SC4577 Low-Frequency General-Purpose Amplifier Applications Package Dimensions • Small-sized package permitting the 2SA1753/ 2SC4577-applied sets to be made small and slim. · Low collector-to-emitter saturation voltage.

2SA4505

Abstract: C4505
Contextual Info: 2SA1759 2SC4505 / 2SC4620 Transistors High-voltage Switching Transistor Camera strobes and Telephone, Power supply I 2SA1759 # Features 2) 3) 4) 5) • \ Absolute maximum ratings (Ta“ 2 5 t ) High breakdow n voltage. ( V c e o = — 400V ) Low Vcetsa?). (T yp .—0.2 V at Ic /Ib = —2 0 /— 2m A)

2SA1755

Contextual Info: 2SA1755 Silicon PNP Epitaxial Application TO-92MOD. High speed switching Table 1 Ordering Information Type No. hFE1 ———————————————————— 2SA1755B 50 to 100 ————————————————————

2SC4596

Abstract: transistor 2sc4596 2SC4596 equivalent 2SA1757 1MH60
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.3V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·Complement to Type 2SA1757

Contextual Info: 2SA1752 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)500m Absolute Max. Power Diss. (W)20.0# Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SA753

Abstract: EN3197 2SA17 2SA1753 2SC45 2SC4577 transistors 2SA 2SA POWER TRANSISTORS
Contextual Info: Ordering number: EN 3197 2SA1753/2SC4577 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp Applications Features •Small-sized package permitting the 2SA1753/2SC4577-applied sets to be made small and slim. • Low collector-to-emitter saturation voltage.

2SA1757

Abstract: 2sa1757 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation

2SA1759

Abstract: 2SC4505 2SC4620
Contextual Info: Transistors 2SA1759 2SC4505 / 2SC4620 96-97-A324 (96-178-C300) 305 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

A1757

Abstract: C5103 transistor A1952 2SA1757,A1757
Contextual Info: 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 Transistors I •F e a tu re s •A b s o lu te maximum ratings Ta—2 5 t 1) 2) 3) 4) Param eter C ollector-base v o lta le Coliector-em itter voitaae Em itter-base voltage High-speed Switching Transistor 2SA1952 / 2SA1906 / 2SA1757

2sa1758

Contextual Info: 2SA1758 Transistor, PNP Features • available in TO-220FP SC-67 package • high speed switching, typically tf = 0.18 M_s at lc = -6 A • low collector saturation voltage typically VCE(sat) =-0.22 V at lc/lB = -6AM).3A • wide safe operating area (SOA)

2SA1759

Abstract: 49411 747 datasheet 7719
Contextual Info: SPICE PARAMETER 2SA1759 by ROHM TR Div. * 2SA1759 PNP BJT model * Date: 2006/12/18 .MODEL 2SA1759 PNP + IS=250.00E-15 + BF=156.23 + VAF=100 + IKF=.27401 + ISE=250.00E-15 + NE=1.3315 + BR=4.2710 + VAR=100 + IKR=.13737 + ISC=592.05E-15 + NC=3.0320 + NK=.96812

Contextual Info: 2SA1753-5 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)15

2SA1757

Abstract: 2SA4596
Contextual Info: 2SA1757 h -y y v 7s £ /Transistors 2SA1757 i e ^ = i r ' > 7 ^ 7 0l / - t ^ P N P y ' 3 > Epitaxial Planar PNP Silicon Transistor " J o ' s ' l l High Speed Switching 1) t f = 0 15 ms Typ.) ( I c = - 3 A ) 2) =1 b 0 'o V c E ( s a t|= - 0 2V (Typ.) (Ic /I b = - 3 A / - 0 . 1 5 A )

2sa1758

Abstract: A1758 A1758E
Contextual Info: h7 > y $ / T ransistors 2SA1758 X t °$ * y 7 J l'7 °ls - t M P N P y Un > h ÿ > y Z $ 2 S A 1 7 5 8 Epitaxial Planar PNP Silicon Transistor y ^ - > ^ 7 H ig h Speed Switching • • « f t 1 A & 0 /D ¡m e n s ¡o n s Unit : mm) ' f I0. 0 tf = 0 .1 8

2SA1758

Contextual Info: JMnic Product Specification 2SA1758 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Emitter

2SC4505

Abstract: T100 2SA1759
Contextual Info: 2SA1759 Transistors High-voltage Switching Transistor Camera strobes and Telephone, Power supply (−400V, −0.1A) 2SA1759 zDimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage, typically VCE (sat)= −0.2V at IC / IB = −20mA / −2mA.