2SA1587 Search Results

A1587

Abstract: 2SA1587 MARKING J1A 2SC4117
Contextual Info: TO SH IBA 2SA1587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 587 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • Unit in mm 2.1 ± 0.1 High Voltage : V^ e q = —120V ±0.1 “•1.25 -H Excellent hjpg Linearity

2SA1587

Abstract: 2SC4117
Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.) ·

Contextual Info: 2SA1587 SILICON PNP EPITAXIAL TYPE U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : V q e o = —120V Excellent hjrg Linearity :hpE Ic = —0.1m A /hfE (Ic = —2mA) = 0.95 (Typ.) High hpE : hj'E = 200~700 Low Noise : NF = ldB (Typ.), 10dB(Max.)

A1587

Abstract: marking IAY 2SA1587 2SC4117
Contextual Info: TOSHIBA 2SA1587 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • Unit in mm High Voltage : Vç;E o = —120V • 2.1 ± 0.1 L 25±0.1 Excellent hFE Linearity OO + I : hFE dC = - 0.1mA) / hFE (IC = - 2mA) = 0.95 (Typ.)

Contextual Info: TO SHIBA 2SA1587 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • • High Voltage : VCEO~ —120V Excellent hEE Linearity : hpE (Ic = —0.1mA) / hjrg (Iq = —2mA) = 0.95 (Typ.)

hFE-200

Abstract: 2SA1587 marking CG
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SA1587 Features High voltage VCEO=-120V High hFE hFE=200 to 700 Low noise Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120

2SA1587

Abstract: 2SC4117
Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) •

2SA1587

Abstract: 2SC4117
Contextual Info: 2SA1587 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1587 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 : VCEO = −120 V

2SC4174

Abstract: 2SA1572 2SAI611 2SA1584 2SA1609 2SA1613 2sc4118 2SA1568 2SA1571 2SA1573
Contextual Info: - 42 - Ta=25‘iO, *EP(àTc=25'1C M 2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SA1576 2SA1577 2SA1579 2SA1580 2SA1581 2SA1582 2SA1584 2SA1585S 2SA1586 2SA1587 2SA1588 2SA1589 2SA1590 2SA1591 2SA1592 2SA1593 2SA1597 2SA1602 2SA1603 2SA1604 2SA1605 2SA1606

VQE11

Abstract: 2SA1587 2SC4117
Contextual Info: 2SC4117 TO SH IBA TOSHIBA TRANSISTOR 2 SILICON NPN EPITAXIAL TYPE PCT PROCESS S C 4 1 1 7 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS High Voltage Excellent hjpg Linearity High hpE Low Noise Complementary to 2SA1587 Small Package V C E O = 120V

Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.)

Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) •

Contextual Info: 2SC4117 TO SH IB A 2 S C 4 1 17 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS High Voltage Excellent hpjj; Linearity High hpE Low Noise Complementary to 2SA1587 Small Package VCEO = 120V

Contextual Info: 2SA1587 TOSHIBA 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • High Voltage : V q e O “ - 120V Excellent hpE Linearity : hpE (Iq = —0.1mA) / hjr^ (Iç = —2mA) = 0.95 (Typ.)

Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

2SA1587

Abstract: 2SC4117
Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

npn TRANSISTOR c105

Abstract: 2SA1587 2SC4117 X10-5
Contextual Info: 2SC4117 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 17 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS High Voltage Excellent hjpg Linearity High hpE Low Noise Complementary to 2SA1587 Small Package V CEO = 120V hpE (IC = 0.1mA) / hpE (Ic = 2mA)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1598

Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
Contextual Info: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs