2SA1452A Search Results

A1452A

Abstract: 2SA1452A 2SC3710A
Contextual Info: 2SA1452A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1452A ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = −0.4 V (最大) (IC = −6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

c3710a

Abstract: 2SC3710A C371 2SA1452A
Contextual Info: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

Contextual Info: TOSHIBA 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0 / j s (Typ.)

2SA1452A

Abstract: 2SC3710A
Contextual Info: TOSHIBA 2SA1452A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1452A HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage r 2 '^ " 0 : VCE (sat)= - 0 .4 V (Max.) (at Iq = - 6 A )

Contextual Info: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

A1452A

Abstract: 2sa1452a A1452 2SC3710A
Contextual Info: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)

2SA1452A

Abstract: 2SC3710A
Contextual Info: 2SC3710A TO SHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1452A

Contextual Info: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A

2SA1452A

Abstract: 2SC3710A
Contextual Info: 2SA1452A TO SH IBA 2SA1452A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -y 5 < tY' o o 2.7±Q 2 of ml +1 in 1.1 1.1 0.75 ±0.15 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC

A1452

Abstract: A1452A 2SA1452A 2SC3710A A-1452
Contextual Info: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)

2SC3710A

Abstract: 2SA1452A
Contextual Info: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1452A

2SA1452A

Abstract: 2SC3710A s2555
Contextual Info: 2SA1452A TO SH IBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage . , .x — n a \ t 10 ±0.3 t^ , — • vuiii (sat)- '“'•rrv v"iaA^ van •

c3710a

Abstract: 2SA1452A 2SC3710A
Contextual Info: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A

IR-1U

Contextual Info: TOSHIBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS Low Collector Saturation Voltage • V qe (sat)“ —0.4V (Max.) (at Ic = - 6A) High Speed Switching Time : tgtg^l.O^siTyp.)

A1452A

Contextual Info: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

10f150

Abstract: 2SA1452A 2SC3710A
Contextual Info: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including