2SA145 Search Results

2SC3709

Abstract: 2SA1451 pnp hfe 120-240
Contextual Info: JMnic Product Specification 2SA1451 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3709 APPLICATIONS ・High current switching applications PINNING

2SA1452

Abstract: 2SC3710
Contextual Info: AOK AOK Semiconductor P ro d u c t S p ecificatio n 2SA1452 Silicon PNP P o w er Transistors D E S C R IP T IO N • W ith T D - 2 2 0 F a p a c k a g e • L o w co llecto r s a tu ratio n v o lta g e • H ig h s p e e d sw itching tim e • C o m p le m e n t to typ e 2 S C 3 7 1 0

A1452A

Abstract: 2SA1452A 2SC3710A
Contextual Info: 2SA1452A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1452A ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = −0.4 V (最大) (IC = −6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

C3709A

Abstract: 2SA1451A 2SC3709A
Contextual Info: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1451A

Contextual Info: Product specification 2SA1455K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low noise design:NF=0.2dB Typ. 0.55 High breakdown voltage:VCEO=-120V +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

c3710a

Abstract: 2SC3710A C371 2SA1452A
Contextual Info: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

Contextual Info: TOSHIBA 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0 / j s (Typ.)

D1351

Abstract: ELLS 110 2SA1458 U110 5925B
Contextual Info: Silicon Transistor 2SA1458 P N P n L £ ? j r ' > 7 J U i & ' > ' z i > b :ÿ > i S Z > 9 m m p i g i l i ¿s j: z f * m # m x + » 0X4 o - y f > =r u 9 ï f â f n m i î & ' h S 0 3 1 / ^ : ? i i r ! l ; ô iV J ' ? v \, t 'o 02SC3731 t rJ>7°'J / 'y 9 UTÎÎfflT'ë i t o

2SA1455K

Abstract: 2SC3722K T146 T147 OA95
Contextual Info: 2SA1455K K ~7 > y 7s £ /'Transistors P N P '> U n > 2 S A 1 4 5 5 K Epitaxial Planar PNP Silicon Transistor £ i*E ftJ l& & g i£ ^ ig itiffl/H ig h Voltage Low Freq. Low Noise Amp. • ftft 1 » W E T * S o Vceo = -1 2 0 V 2) N F=0.2dB Typ.) (at V c e = —6V, lc = - 1 0 0

a1451a

Abstract: 2SA1451A A1451 2SC3709A
Contextual Info: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3710 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat ~°-4V(Max.) 0 3.2 ±0.2 (at Ic=6A) . High Speed Switching Time : tstg= l.Ous(Typ.) Zli . Complementary to 2SA1452

2SA1450

Abstract: 2sc3708
Contextual Info: Ordering number:EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions • Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V unit:mm 2003A [2SA1450/2SC3708]

2SA1452A

Abstract: 2SC3710A
Contextual Info: TOSHIBA 2SA1452A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1452A HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage r 2 '^ " 0 : VCE (sat)= - 0 .4 V (Max.) (at Iq = - 6 A )

Contextual Info: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

Tr 2SA1576

Abstract: 2SC4649 2sb1051
Contextual Info: Tr T ransistürs • EM3, UMT, SMT SOT-23, SC-59 Type Type UM T — — 2SA1037KLN — — 2SA1455K — — 2SC2412KLN — — 2SC3722K 2SA1774 — 2SC4617 Vi I :)(V) •V,.^ Function EM3 SMT Low Noise lr (mA) Pc(mW)(Ta = 25"C) UMT, SMT EM3 hff V ce(V) Ir(mA)

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

A1452A

Abstract: 2sa1452a A1452 2SC3710A
Contextual Info: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)

2sa1452

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • • • 2SA1452 Low Collector Saturation Voltage : v CE(sat)= —0.4V(Max.) (at Ic = -6A ) High Speed Switching Time : tgtg= 1.0,us (Typ.)

MARKING SMD PNP TRANSISTOR R

Abstract: equivalent 2sa1455k 2SA1455K
Contextual Info: Transistors SMD Type Epitaxial Planar PNP Silicon Transistor 2SA1455K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low noise design:NF=0.2dB Typ. 0.55 High breakdown voltage:VCEO=-120V +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

2SA1451

Abstract: 2SC3709
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1451 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3709 APPLICATIONS

Contextual Info: TOSHIBA 2SA1451A T O SH IBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage • V q e (sat)“ —0.4V (Max.) (at Ic = -6A ) High Speed Switching Time : tgtg^l.O^siTyp.)

ai 232 nec

Abstract: IS955 D1351 transistor C982 CD 4011 IC al 232 nec 1S955 2SA1458 IC 7824 ST 5925B
Contextual Info: - r — S • S /— K Silicon T ra n sisto r 2SA1458 R N P x t 7 + ' > ì& m m # 7 & ; p M '> >; □ x z + i& m v h =7 M 'y & r m » 0X4 o 7 f > / M i !Ü K o =i u 9 2.0±0.2 oau 7 ii'0 O 2 S C 3 7 3 1 1 =i > 7 ° ' / > ? ') V f ë m - C ë i t o T a = 25 "e)

a1451a

Contextual Info: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)