2SA1238 Search Results

2sa1229

Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
Contextual Info: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242

Contextual Info: 2SA1238 Transistors PNP Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)150m P(D) Max. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SK332

Abstract: 2SC4072 2sk333 2sk1806 2sk377 j 2sc3064
Contextual Info: SA* VO D P Dual P a c k a g e S e r i e s T h e S a n y o DP s e r i e s i n c l u d e t r an s is t or s , FETs for LF amp use as well as t r a n s i st o rs , F E Ts for HF amp use. B e c a u s e of t h e ir u n i q u e p a c k a g e design, they are c a p a b l e of b e i n g m o u n t e d e a s i l y and the c h a r a c t e r i s t i c s can

2SA1281

Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400

2SA1238

Abstract: bc 147 B transistor transistor BC 147
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 3SE D • 7 T T 7 0 7 b 0 G 0 Ô Û 2 7 7 Hi . tiifiîin'i :.j_w PNP Epitaxial Planar Silicon Transistor 2029A a! "T-Zf-li Differential Amp Applications D968C Applications . Differential amp, current mirror. Features

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

microphone low-noise ti

Abstract: 2SC1570NP 2SK1068 2SK1069 2SK1332 2SK1375 2SK1578 2SK1646 2sc3067 2SK2091
Contextual Info: GaAs MESFETs Absolute maximum ratings Package type Device 2SK1646 . CP4 Applications Vos V Vgs (V) Id (mA) Electrical characteristics (Ta = 25 -C) loss @ Vds Pr (mW) 91 . loss (mA) NF @ Vds • I d lYfsl @ Vds • I ds Vds , (V) |Yfe| (mS) Vos

2SA1238

Abstract: MARKING LR SANYO
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 3SE D • 7TT707b 0G0ÔÛ27 7 Hi . "T-Zf-li tiifiî i n'i PNP Epitaxial Planar Silicon Transistor 2029A :.j_w a ! Differential Amp Applications D968C Applications . Differential amp, current mirror. Features . Excellent in t h e r m a l e q u i l i b r i u m