2N7002 Search Results

TRANSISTOR SMD MARKING zg

Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

2N7002A-7

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002KA

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002F

Abstract: 2N7002F_2
Contextual Info: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2

702 transistor smd

Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702
Contextual Info: Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL PARAMETER V ds drain-source voltage Id

Contextual Info: NEW PRODUCT 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

2N7002G-AE2-R

Abstract: 2N7002
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

an3r

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during

SOT-363

Abstract: 2N7002ZDWG-AL6-R marking 2A sot-363
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during

2N7002K

Abstract: RG33
Contextual Info: 2N7002K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE * * Gate Pretection Diode SOURCE 2 Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

SC-89

Contextual Info: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories

Contextual Info: MOSFET IC DIP Type SMD Type Type Product specification 2N7002 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Voltage controlled small signal switch 0.4 3 High density cell design for low RDS ON 1 High saturation current capability

2N7002L

Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60

Contextual Info: 2N7002 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) Top View S .056 (1.43) .052 (1.33) 3 1 2 0.037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95)

Contextual Info: 2N7002 DMOS Transistors N-Channel TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1. Gate 2. Source 3. Drain 0.037 (0.95) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125)

Marking Code S72

Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)

Contextual Info: WEITRON Small Signal MOSFET N-Channel 2N7002 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 3 Ω *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 7.5ns GATE 1 2 2 SOURCE

2N7002K

Contextual Info: 2N7002K N-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free 3 DRAIN 1 GATE * * Gate Pretection Diode Description: DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

2N7002BKS

Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
Contextual Info: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET