2N6788 JANTX Search Results

2N6788

Abstract: 2n6790
Contextual Info: 2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and

1RF9130

Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 2N6788 JANTX2N6790

2n6788

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

mosfet 2n6788

Abstract: 2N6788 2N6788 JANTX
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Contextual Info: 2N6788 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

Contextual Info: 2N6788+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

mosfet 2n6788

Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Contextual Info: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds

Contextual Info: 2N6788+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 March 2004. INCH-POUND MIL-PRF-19500/555H 8 December 2003 SUPERSEDING MIL-PRF-19500/555G 8 December 1997 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,

2N6794

Abstract: mosfet 2n6788 MOSFET cross-reference 2N6788 2N6790 2N6792 mmc 4011 E transistor equivalent 2n6788
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 May 2010. INCH-POUND MIL-PRF-19500/555K 11 February 2010 SUPERSEDING MIL-PRF-19500/555J 8 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. INCH-POUND MIL-PRF-19500/555L 17 April 2013 SUPERSEDING MIL-PRF-19500/555K 11 February 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,

RG 2006

Abstract: 2N6788 2N6792 2N6790 2N6794
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 March 1998. INCH POUND MIL-PRF-19500/555G 08 December 1997 SUPERSEDING MIL-S-19500/555F 31 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

mosfet 2n6788

Contextual Info: 2N6788U and 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and

Contextual Info: International sslRectifier Government and Space hexfet power m o sfets Hermetic Package N-Channel Part BV d s s Number V IRFF024 RDS(on) (Ohms) •d @ Tq = 100°C R thJC Max. Pd @ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) 60 0.15 8.0 IRFF110 100 0.60

2N6901 JANTX

Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements

2N6155

Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
Contextual Info: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

406J

Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC

2N6898

Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Contextual Info: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

2N6758

Abstract: 2N6902 QPL-19500
Contextual Info: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,

QPL-19500

Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits

2N6898 JANTX

Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Contextual Info: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

2N6782

Abstract: 2n6800 LH0063 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds

2N6792 JANTX

Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds