2N6262 TRANSISTOR Search Results

2N6262

Abstract: 2N6262 datasheet
Contextual Info: SavantIC Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications

2N6262

Abstract: 2N6262 datasheet 100v audio amplifier 2N6262 Application Notes
Contextual Info: Inchange Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications

2N3442 RCA

Abstract: 2N6262 RCA 2n6262 RCA-2N3442 2N3442 2N4347 2SC SERIES TRANSISTORS DG173BL dg173b transistor 2n3442
Contextual Info: ïïï 3875081 G E SOLID DE |3fl7SDfll D0173til 3 STATE 01E 17361 3 ^ -/3 D G eneral-Purpose Power Transistors File Number 528 2N3442, 2N4347, 2N6262 High-Voltage Silicon N-P-N Transistors

2n4347

Abstract: 2N6262
Contextual Info: 2N4347, 2N6262 2N4347, 6262 NPN POWER TRANSISTORS High Power and High Voltage Applications DIM MIN A B C D E F G H J - K L M - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 PIN CONFIGURATION

2n6262

Abstract: 2n3442
Contextual Info: ÏÏÏ 3875081 G E SOLID DE |3fl7S0fll D0173til 3 STATE 01E 17361 7^ 3^-/3 D General-Purpose Power Transistors File N um ber 528 2N3442, 2N4347, 2N6262 High-Voltage Silicon N-P-N Transistors

Contextual Info: Power Transistore File Number 528 HARRIS S E M I C O N D 2N3442, 2N4347, 2N6262 S E CT OR 27E D • 4 3 0 5 5 7 1 Oül^flüT 7 H I H A S ‘T - 3 3 - 1 3 ' High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS High-Power Devices for Applications in

2n4347

Contextual Info: POWER TRANSISTORS PT M A X IM U M RATINGS <5> Ic 25°C B V cbo B V ceo B V ebo A V V V Watts TYPE NO 117 2N3442 2N4347 2N6262 160 7 140 bFE @ Ic A VCE V 70 3 4 4 1 2 .5 M IN M A X 10 20 Sat Voltages VCE V be V V 100 140 120 7 5 15 70 2 150 170 150 7 10 20

SDT423

Abstract: SDT411 SDT425
Contextual Info: 33 SILICON POWER TRANSISTORS CURRIE MT G A IN TYPE NUM BER CASE TYPE V CBO V V EBO V CEO I V I V h M IN . I MAX. V CE V S A T U R A T IO VI V O LT A G E S <s> C I A V CE(s V BE(s) V I V 'c A 1 *B A 10 AMP SILICON NPN 2N5313 2N5315 2N5317 TO-61 TO-61 TO-61-I

2N3773 equivalent

Abstract: transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent
Contextual Info: 8368602 SOL ITRON DEVICES re » ? ©atm,®® INC T5 95D DE | f l 3 h a t . 0 E • 02903 00 0 5 ^ 0 3 D □ ^Sww&rßik T~ I — " Devices, Ine MEDIUM VOLTAGE CHIP N U M BER IMPIM SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 31 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.

2N3773 equivalent

Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
Contextual Info: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. BVc b o •c (A) MAX (W) 10 2N6249 (V) bvceo h fiE % *TYP (A) VCE(SAT) ®*c "TYP (MHZ) nun (V) MIN MIN MAX 125 110 100 20 100 5.0 3.5 10 4.0 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375 275 8.0 50

RCS258

Abstract: RCA 40373 BD182 rca RCA 40363 RCA 40251 40363 2N3055 rca 40411 40411 rca bd142
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ {s a t ) —V 'C E X - m A h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 MHz min; P j to 150 W max

SDT9309

Abstract: 2N3055 2N3055H SDT9302 SDT9301 2n3442 ic 331
Contextual Info: -JFplitran [p[fiì ®l!D Tr ©ÄTTÄIL® Devices. Inc. SINGLE DIFFUSED NPN MESA TRANSISTORS Ü /MMÏÏ? K M DEVICE TYPE VCEO hpE ( VOLTS MIN/MAX ic (A Vc e (sat) MAX (V) (A) ic Isb PULSE VCE(V) Ic(A ) (sec) ÍT MIN (MHz) PT MAX (W) CASE CHIP TYPE TYPE

2N6220

Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
Contextual Info: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079

2N6262

Contextual Info: POWER TRANSISTORS Sat Voltages PT m TYPE NO. MAXIMUM RATINGS hfE @ Test Conditions! Ic IB I EBP A A ma Ic A Vet 70 3 4 5 5.7 10 2.0 15 70 2 4 1 2.0 2 .2 20 70 3 2 .5 1.0 3 .3 ~2~ I •VCTTT1 ; iV T T T | ; MIN MAX Watts V V V A 2N3442 117 160 140 7 10 20 2N4347

rca 40411

Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max

RCA 40313

Abstract: 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . Pt to 300 W . V c E to 170 V H O M E T A X IA L -B A S E N-P-N POW ER T Y P E S le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

SILICON TRANSISTOR CORP

Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
Contextual Info: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O

BDX33C darlington pair

Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

RCA 40250

Abstract: RCA 40250 transistor 2N3055 ST rca 2n6254 Transistor 40347 transistor RCA 528 st bux RCA 528 40250 RCA 2N6259 RCA
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

RCA 40313

Abstract: RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. lc • 8 0 A m a x . P t - 3 0 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax.