2N5927 Search Results

Contextual Info: 2N5927 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)150 I(C) Max. (A)100 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m¶ @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)120

D0307

Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
Contextual Info: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory

2N5927

Contextual Info: NOTICE OF CANCELLATION INCH-POUND MIL-S-19500/440A ER NOTICE 3 13 January 2005 SUPERSEDING NOTICE 2 24 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N5927 JANTX AND JANTXV MIL-S-19500/440A(ER), dated 10 June 1991, is hereby canceled. Future acquisition for this material should refer to

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

TO63 package

Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3

2N5251

Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
Contextual Info: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20

Contextual Info: "ENGIDEAS IN BIG POWER" • PowerTech 120 A M P E R E S JAN T X 2 N 5 9 2 7 PT- 7 0 0 PT- 7 0 2 SILICON NPN TRANSISTOR FEATURES: U C E isatl . . 0 ,7 5 V . . 70 A t.S V S > 7 0 A bp 5 min @12 0 A

2N5927 JAN

Contextual Info: BIG IDEAS IN PowerTech big po w er ” • 120 AMPERES JAN T X 2 N 5 9 2 7 P T - 700 P T - "702 SILICON NPN TRANSISTOR FEATURES: V c E s a t . V BE 0.75 V @ 70 A h p ^ . 5 min @ 120 A 1.5 V @ 70 A t j .

Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840

PT-8502

Abstract: MT-1042 pt-9504 2N5928 TO114 1042 TO114 package PPS-250 TO63 package PT-7501
Contextual Info: Click on the underlined number to see specs on the part or package. Please contact the company for more information on other parts and packages. Part Number 70 AMPS PT-7501 PT-7502 PT-7503 PT-7509 PT-3512 Voltage Package 100 120 150 200 325 TO-63 TO-63 TO-63

2N5927

Abstract: H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG
Contextual Info: 17E “BIG IDEAS IN BIG POWER" D • PowerTecn POIdERTECH INC T-33-is ISO AMPERES JAN T X 2 N 5 9 2 7 FT- 70Q PT- "702 SILICON NPN TRANSISTOR FEATURES: V CE sat . 0.75 V @70 A VBE. 1.5 V @70 A hF E .

4010 IC

Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
Contextual Info: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

TO63 package

Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3

Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

2N5940

Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP

04029-01TX

Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing

2N5927

Abstract: powertech 2N5927 JAN
Contextual Info: BIG IDEAS IN BIG POWER" • PowerTech 120 AMPERES JAN T X 2 N 5 9 2 7 PT- 7 0 0 PT- 7 0 2 SILICON IMPIM TRANSISTOR FEATURES: v CE sat 0.75 V @70 A V BE' 5 min @1 2 0 A FE ' 2.5 n see 1.5 V@ 70 A 1.2 A @ 100 V ■S/b 6 Joules : S /b’ SAFE OPERATING AREA

2N5339 Diode

Abstract: 40327 FR 302 Diode 2N4866 2N1479 2N1480 2N1481 2N1482 2N1700 2N5781
Contextual Info: s g g g g g g g g 0 0 0 0 0 0 cncncncncncncncnroro A cn 0 Ö 0 0 Ö 0 0 Ö 0 Ö Ö Ö c o c o r o r o c o c o c o c o m m - * —i- — ^ C O C O C O —i- —i- — 0 cn cn b i c n c n c n b i c n o c n c n c n c n ö ö ö o o o o o 03 COO?COq?COJk.r*.-*>|COI'O.U

5N520

Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278
Contextual Info: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V

2N4211

Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
Contextual Info: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110