2N5031 Search Results

2N3571

Abstract: MA42141 2N5054 2n5053 2N5651
Contextual Info: Silicon Low Noise Bipola Transistors MODEL NUMBER PAGE 2N 2857 2N 3570 2N3571 11-3 11-3 11-3 2N 3572 2N 3683 11-3 11-3 11-3 2N 3839 2N 38 80 . 2N 3953 2N5031 2N 5032 2N5053 2N5054 2N 51 79 2N5651 2N 5662 11-3 11-3 .11-3 11-3 11-3 11-3

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC

2N5032

Abstract: 2N5031 t0206
Contextual Info: MOTOROLA SEM ICO NDUCTOR 2N5031 2N5032 TECHNICAL DATA The RF Line 2.5 dB @ 450 MHz - 2N5031 3.0 dB @ 450 MHz - 2N5032 HIG H FREQUENCY TRANSISTORS NPN SILICON HIG H FREQUENCY TRANSISTORS NPN SILICON . . . designed p r im a r ily signal a m p lifie rs . •

2N5160

Abstract: 2N5583 MRF531 2n3866 noise BFR96 MFR901 BFR90 amplifier 2N5032 2N5943 BFR90
Contextual Info: Low-Noise T h e lo w -n o ise d evices listed are p ro d u c e d w ith c a r e fu lly c o n t r o lle d rj, a n d f j to o p tim iz e d evice noise p e rfo rm a n ce . D evices liste d in th e m a trix are c la ssifie d a c c o rd in g t o noise fig u re p e rfo rm a n c e versus

2N3866 MOTOROLA

Abstract: 2N2857 MOTOROLA MOTOROLA 2N5179 2N2857 MRF2369 2N5179 transistors for uhf oscillators transistor 2N5179 2N6603 2N4959 MOTOROLA
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued UHF and Microwave Oscillators The transistors listed below are for U H F and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power.

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

S-parameter 2N5179

Abstract: s-parameter 2N2857 2N3953 bipolar transistor s-parameter 2N3570 NPN transistor mhz s-parameter
Contextual Info: Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description Nominal fT - 1.8 G H z Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency - 10 M H z to 600 M Hz Geometry - 20 This series of N PN silicon planar transistors, packaged in the 509 case style are useful for low noise, high gain

MA40285

Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Contextual Info: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

TRANSISTOR 2N2950

Abstract: 2N2950 2N5342 2N3137 transistor 2n4959 2N4427 2N5032 Transistor 2N3866 transistor 2n5109 2N3600
Contextual Info: GENERAL TRANSISTOR CORP 54E D • 3=126001 0 0 0 0 0 7 b M ■ General Transistor Corporation *f “ 3 1" O I 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 * Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN TRANSISTORS FOR RF APPLICATIONS

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

bfr96 equivalent

Abstract: MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 MRF544 microsemi MRF237 5GHz PNP transistor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz